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71T75602150BG8 Datasheet(PDF) 5 Page - Integrated Device Technology |
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71T75602150BG8 Datasheet(HTML) 5 Page - Integrated Device Technology |
5 / 23 page 6.42 IDT71T75602, IDT71T75802, 512K x 36, 1M x 18, 2.5V Synchronous ZBT™ SRAMs with 2.5V I/O, Burst Counter, and Pipelined Outputs Commercial and Industrial Temperature Ranges 5 Absolute Maximum Ratings(1) Pin Configuration — 1Mx 18 100-Pin TQFP Capacitance (TA = +25°C, f = 1.0MHz) NOTES: 1. Pins 14, 16, and 66 do not have to be connected directly to VDD as long as the input voltage is ≥ VIH. 2. Pins 38, 39 and 43 will be pulled internally to VDD if not actively driven. To disable the TAP controller without interfering with normal operation, several settings are possible. Pins 38, 39 and 43 could be tied to VDD or VSS and pin 42 should be left unconnected. Or all JTAG inputs (TMS, TDI and TCK) pins 38, 39 and 43 could be left unconnected “NC” and the JTAG circuit will remain disabled from power up. 3. Pin 43 is reserved for the 36M address. JTAG is not offered in the 100-pin TQFP package for the 36M ZBT device. Top View 100 TQFP NOTES: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. VDD terminals only. 3. VDDQ terminals only. 4. Input terminals only. 5. I/O terminals only. 6. This is a steady-state DC parameter that applies after the power supply has reached its nominal operating value. Power sequencing is not necessary; however, the voltage on any input or I/O pin cannot exceed VDDQ during power supply ramp up. 7. During production testing, the case temperature equals TA. NOTE: 1. This parameter is guaranteed by device characterization, but not production tested. Symbol Rating Commercial Industrial Unit VTERM(2) Terminal Voltage with Respect to GND -0.5 to +3.6 -0.5 to +3.6 V VTERM(3,6) Terminal Voltage with Respect to GND -0.5 to VDD -0.5 to VDD V VTERM(4,6) Terminal Voltage with Respect to GND -0.5 to VDD +0.5 -0.5 to VDD +0.5 V VTERM(5,6) Terminal Voltage with Respect to GND -0.5 to VDDQ +0.5 -0.5 to VDDQ +0.5 V TA(7) Operating Ambient Temperature 0 to +70 -40 to +85 o C TBIAS Temperature Under Bias -55 to +125 -55 to +125 o C TSTG Storage Temperature -55 to +125 -55 to +125 o C PT Power Dissipation 2.0 2.0 W IOUT DC Output Current 50 50 mA 5313 tbl 06 Symbol Parameter(1) Conditions Max. Unit CIN Input Capacitance VIN = 3dV 5 pF CI/O I/O Capacitance VOUT = 3dV 7 pF 5313 tbl 07 100 99 98 97 96 95 94 93 92 91 90 87 86 85 84 83 82 81 89 88 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 NC NC VDDQ VSS NC I/OP2 I/O15 I/O14 VSS VDDQ I/O13 I/O12 VSS VDD I/O11 I/O10 VDDQ VSS I/O9 I/O8 NC NC VSS VDDQ NC NC 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 NC VDDQ VSS NC I/OP1 I/O7 I/O6 VSS VDDQ I/O5 I/O4 VSS VDD I/O3 I/O2 VDDQ VSS I/O1 I/O0 NC NC VSS VDDQ NC NC 5313 drw 02a VDD(1) NC NC VDD(1) NC NC VDD(1) A10 ZZ , Symbol Parameter(1) Conditions Max. Unit CIN Input Capacitance VIN = 3dV 7 pF CI/O I/O Capacitance VOUT = 3dV 7 pF 5313 tbl 07a Symbol Parameter(1) Conditions Max. Unit CIN Input Capacitance VIN = 3dV 7 pF CI/O I/O Capacitance VOUT = 3dV 7 pF 5313 tbl 07b 165 fBGA Capacitance (TA = +25°C, f = 1.0MHz) 119 BGA Capacitance (TA = +25°C, f = 1.0MHz) |
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