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71V416S10YGI Datasheet(PDF) 5 Page - Integrated Device Technology |
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71V416S10YGI Datasheet(HTML) 5 Page - Integrated Device Technology |
5 / 9 page 6.42 IDT71V416S, IDT71V416L, 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) Commercial and Industrial Temperature Ranges 5 71V416S/L10 71V416S/L12 71V416S/L15 Symbol Parameter Min. Max. Min. Max. Min. Max. Unit READ CYCLE tRC Read Cycle Time 10 ____ 12 ____ 15 ____ ns tAA Address Access Time ____ 10 ____ 12 ____ 15 ns tACS Chip Select Access Time ____ 10 ____ 12 ____ 15 ns tCLZ(1) Chip Select Low to Output in Low-Z 4 ____ 4 ____ 4 ____ ns tCHZ(1) Chip Select High to Output in High-Z ____ 5 ____ 6 ____ 7ns tOE Output Enable Low to Output Valid ____ 5 ____ 6 ____ 7ns tOLZ(1) Output Enable Low to Output in Low-Z 0 ____ 0 ____ 0 ____ ns tOHZ(1) Output Enable High to Output in High-Z ____ 5 ____ 6 ____ 7ns tOH Output Hold from Address Change 4 ____ 4 ____ 4 ____ ns tBE Byte Enable Low to Output Valid ____ 5 ____ 6 ____ 7ns tBLZ(1) Byte Enable Low to Output in Low-Z 0 ____ 0 ____ 0 ____ ns tBHZ(1) Byte Enable High to Output in High-Z ____ 5 ____ 6 ____ 7ns WRITE CYCLE tWC Write Cycle Time 10 ____ 12 ____ 15 ____ ns tAW Address Valid to End of Write 8 ____ 8 ____ 10 ____ ns tCW Chip Select Low to End of Write 8 ____ 8 ____ 10 ____ ns tBW Byte Enable Low to End of Write 8 ____ 8 ____ 10 ____ ns tAS Address Set-up Time 0 ____ 0 ____ 0 ____ ns tWR Address Hold from End of Write 0 ____ 0 ____ 0 ____ ns tWP Write Pulse Width 8 ____ 8 ____ 10 ____ ns tDW Data Valid to End of Write 5 ____ 6 ____ 7 ____ ns tDH Data Hold Time 0 ____ 0 ____ 0 ____ ns tOW(1) Write Enable High to Output in Low-Z 3 ____ 3 ____ 3 ____ ns tWHZ(1) Write Enable Low to Output in High-Z ____ 6 ____ 7 ____ 7ns 3624 tbl 10 Timing Waveform of Read Cycle No. 1(1,2,3) AC Electrical Characteristics (VDD = Min. to Max., Commercial and Industrial Temperature Ranges) NOTE: 1. This parameter is guaranteed with the AC Load (Figure 2) by device characterization, but is not production tested. DATAOUT ADDRESS 3624 drw 06 tRC tAA tOH DATAOUT VALID PREVIOUS DATAOUT VALID tOH NOTES: 1. WE is HIGH for Read Cycle. 2. Device is continuously selected, CS is LOW. 3. OE, BHE, and BLE are LOW. |
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