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2SK1466 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SK1466 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc website:www.iscsemi.cn isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor 2SK1466 DESCRIPTION · Drain Current –ID=16A@ TC=25℃ · Drain Source Voltage- : VDSS=900 (Min) · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNI T VDSS Drain-Source Voltage (VGS=0) 900 V VGS Gate-Source Voltage ± 30 V ID Drain Current-continuous@ TC=25℃ 16 A Ptot Total Dissipation@TC=25℃ 250 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.25 ℃ /W Rth j-a Thermal Resistance,Junction to Ambient 35.0 ℃ /W |
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