SBC857ALT1G datasheet(5/7 Pages) ONSEMI

Part #	SBC857ALT1G

Description	General Purpose Transistors

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BC856ALT1G Series

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5

Figure 13. Thermal Response

t, TIME (ms)

1.0

2.0

5.0

1.0

0.5

0.2

0.1

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

0.02

0.01

20

50

10

200

500

100

1.0k

2.0k

5.0k 10k

Figure 14. Active Region Safe Operating Area

VCE, COLLECTOR-EMITTER VOLTAGE (V)

-200

-1.0

TA = 25°C

D = 0.5

0.2

0.1

0.05

SINGLE PULSE

BONDING WIRE LIMIT

THERMAL LIMIT

SECOND BREAKDOWN LIMIT

3 ms

TJ = 25°C

ZqJC(t) = r(t) RqJC

RqJC = 83.3°C/W MAX

ZqJA(t) = r(t) RqJA

RqJA = 200°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) - TC = P(pk) RqJC(t)

t1

t2

P(pk)

DUTY CYCLE, D = t1/t2

-100

-50

-10

-5.0

-2.0

-5.0

-10

-30 -45 -65

-100

1 s

BC558, BC559

BC557

BC556

The safe operating area curves indicate IC−VCE limits of

the transistor that must be observed for reliable operation.

Collector load lines for specific circuits must fall below the

limits indicated by the applicable curve.

The data of Figure 14 is based upon TJ(pk) = 150

°C; TC or

TA is variable depending upon conditions. Pulse curves are

valid for duty cycles to 10% provided TJ(pk)

≤ 150°C. TJ(pk)

may be calculated from the data in Figure 13. At high case or

ambient temperatures, thermal limitations will reduce the

power that can be handled to values less than the limitations

imposed by the secondary breakdown.

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