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IRL2910 Datasheet(PDF) 1 Page - International Rectifier

Part No. IRL2910
Description  HEXFET Power MOSFET
Download  8 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRL2910 Datasheet(HTML) 1 Page - International Rectifier

  IRL2910 Datasheet HTML 1Page - International Rectifier IRL2910 Datasheet HTML 2Page - International Rectifier IRL2910 Datasheet HTML 3Page - International Rectifier IRL2910 Datasheet HTML 4Page - International Rectifier IRL2910 Datasheet HTML 5Page - International Rectifier IRL2910 Datasheet HTML 6Page - International Rectifier IRL2910 Datasheet HTML 7Page - International Rectifier IRL2910 Datasheet HTML 8Page - International Rectifier  
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IRL2910
HEXFET® Power MOSFET
PD - 91375B
S
D
G
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
0.75
°C/W
RθCS
Case-to-Sink, Flat, Greased Surface
0.50
–––
°C/W
RθJA
Junction-to-Ambient
–––
62
°C/W
Thermal Resistance
VDSS = 100V
RDS(on) = 0.026Ω
ID = 55A
l Logic-Level Gate Drive
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low
on-resistance per silicon area.
This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts.
The low thermal
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.
Description
TO-220AB
5/13/98
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
55
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
39
A
IDM
Pulsed Drain Current

190
PD @TC = 25°C
Power Dissipation
200
W
Linear Derating Factor
1.3
W/°C
VGS
Gate-to-Source Voltage
± 16
V
EAS
Single Pulse Avalanche Energy
‚
520
mJ
IAR
Avalanche Current
…
29
A
EAR
Repetitive Avalanche Energy

20
mJ
dv/dt
Peak Diode Recovery dv/dt
ƒ
5.0
V/ns
TJ
Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
Mounting torque, 6-32 or M3 srew
10 lbf•in (1.1N•m)
Absolute Maximum Ratings


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