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IRL2910 Datasheet(PDF) 2 Page - International Rectifier

Part No. IRL2910
Description  HEXFET Power MOSFET
Download  8 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRL2910 Datasheet(HTML) 2 Page - International Rectifier

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IRL2910
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
100
–––
–––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
0.12
–––
V/°C
Reference to 25°C, ID = 1mA
–––
––– 0.026
VGS = 10V, ID = 29A
„
–––
––– 0.030
VGS = 5.0V, ID = 29A
„
–––
––– 0.040
VGS = 4.0V, ID = 24A
„
VGS(th)
Gate Threshold Voltage
1.0
–––
2.0
V
VDS = VGS, ID = 250µA
gfs
Forward Transconductance
28
–––
–––
S
VDS = 50V, ID = 29A
–––
–––
25
VDS = 100V, VGS = 0V
–––
–––
250
VDS = 80V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage
–––
–––
100
nA
VGS = 16V
Gate-to-Source Reverse Leakage
–––
–––
-100
VGS = -16V
Qg
Total Gate Charge
–––
–––
140
ID = 29A
Qgs
Gate-to-Source Charge
–––
–––
20
nC
VDS = 80V
Qgd
Gate-to-Drain ("Miller") Charge
–––
–––
81
VGS = 5.0V, See Fig. 6 and 13
„
td(on)
Turn-On Delay Time
–––
11
–––
VDD = 50V
tr
Rise Time
–––
100
–––
ID = 29A
td(off)
Turn-Off Delay Time
–––
49
–––
RG = 1.4Ω, VGS = 5.0V
tf
Fall Time
–––
55
–––
RD = 1.7Ω, See Fig. 10
„
Between lead,
6mm (0.25in.)
from package
and center of die contact
Ciss
Input Capacitance
–––
3700 –––
VGS = 0V
Coss
Output Capacitance
–––
630
–––
pF
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
330
–––
ƒ = 1.0MHz, See Fig. 5
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
IDSS
Drain-to-Source Leakage Current
LD
Internal Drain Inductance
–––
4.5
–––
LS
Internal Source Inductance
–––
7.5
–––
RDS(on)
Static Drain-to-Source On-Resistance
µA
ns
nH
S
D
G
Source-Drain Ratings and Characteristics
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ƒ ISD ≤ 29A, di/dt ≤ 490A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Notes:
‚ V
DD = 25V, starting TJ = 25°C, L = 1.2mH
RG = 25Ω, IAS = 29A. (See Figure 12)
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
–––
–––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

–––
–––
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.3
V
TJ = 25°C, IS = 29A, VGS = 0V
„
trr
Reverse Recovery Time
–––
240
350
ns
TJ = 25°C, IF = 29A
Qrr
Reverse RecoveryCharge
–––
1.8
2.7
µC
di/dt = 100A/µs
„
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
S
D
G
55
190
A


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