Philips Semiconductors

Product specification

Triacs

BTA216B series B

high commutation

GENERAL DESCRIPTION

QUICK REFERENCE DATA

Glass passivated high commutation

SYMBOL

PARAMETER

MAX.

MAX.

MAX. UNIT

triacs in a plastic envelope suitable

for surface mounting, intended for use

BTA216B-

500B

600B

800B

in circuits where high static and

V

DRM

Repetitive peak off-state

500

600

800

V

dynamic dV/dt and high dI/dt can

voltages

occur. These devices will commutate

I

T(RMS)

RMS on-state current

16

16

16

A

the full rated rms current at the

I

TSM

Non-repetitive peak on-state

140

140

140

A

maximum rated junction temperature,

current

without the aid of a snubber.

PINNING - SOT404

PIN CONFIGURATION

SYMBOL

PIN

DESCRIPTION

1

main terminal 1

2

main terminal 2

3

gate

mb

main terminal 2

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

-500

-600

-800

V

DRM

Repetitive peak off-state

-

500

1

600

1

800

V

voltages

I

T(RMS)

RMS on-state current

full sine wave;

-

16

A

T

I

TSM

Non-repetitive peak

full sine wave;

on-state current

T

surge

t = 20 ms

-

140

A

t = 16.7 ms

-

150

A

I

t = 10 ms

-

98

A

dI

Repetitive rate of rise of

I

100

A/

µs

on-state current after

dI

triggering

I

GM

Peak gate current

-

2

A

V

GM

Peak gate voltage

-

5

V

P

GM

Peak gate power

-

5

W

P

G(AV)

Average gate power

over any 20 ms

-

0.5

W

period

T

stg

Storage temperature

-40

150

˚C

T

j

Operating junction

-

125

˚C

temperature

13

mb

2

T1

T2

G

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may

switch to the on-state. The rate of rise of current should not exceed 15 A/

µs.

October 1997

1

Rev 1.100