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CD1607-B140 Datasheet(PDF) 1 Page - Bourns Electronic Solutions |
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CD1607-B140 Datasheet(HTML) 1 Page - Bourns Electronic Solutions |
1 / 5 page CD1607-B140 / B140L Schottky Barrier Rectifier Chip Diode Features Lead free RoHS compliant* Low profile package Surface mount Very low forward voltage drop General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly smaller electronic components. Bourns offers Schottky Rectifier Diodes for rectification applications, in compact chip package 1607 (Mini-SMA) size format, which offer PCB real estate savings and are considerably smaller than competitive parts. The Schottky Rectifier Diodes offer a forward current of 1 A with a repetitive peak reverse voltage of 40 V. Bourns® Chip Diodes conform to JEDEC standards, easy to handle on standard pick and place equipment and their flat configuration makes roll away much more difficult. Parameter Symbol CD1607- Unit B140 B140L Forward Voltage (Max.) VF 0.5 0.4 V (If = 1 A) Typical Junction CT 110 110 pF Capacitance* Reverse Current (Max.) IR 0.5 1.0 mA at Rated VR) Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted) How To Order CD 1607 - B 1 40 L LF Common Code Chip Diode Package • 1607 = Mini-SMA Model B = Schottky Barrier Series Average Forward Current (Io) Code 1 = 1 A (Code x 1000 mA = Average Forward Current) Reverse Voltage (VR) Code 40 = 40 V Forward Voltage Suffix L = Low Forward Voltage Vf Terminations LF = 100 % Sn (lead free) Absolute Ratings (@ TA = 25 °C Unless Otherwise Noted) Parameter Symbol CD1607- Unit B140 B140L Repetitive Peak VRRM 40 40 V Reverse Voltage Reverse Voltage VR 40 40 V Maximum RMS Voltage VRMS 28 28 V Avg. Forward Current IO A 1 Forward Current, Surge Peak Isurge A * 0 3 (60 Hz, 1 cycle) Typical Thermal RθJL W / C ° 0 2 Resistance** Storage Temperature TSTG C ° 0 5 1 + o t 5 5 - Junction Temperature TJ C ° 5 2 1 + o t 5 5 - * Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC. ** Thermal resistance junction to lead. * Condition: 8.3 ms single half sine-wave superimposed on rate load (JEDEC method). Tel: +886-2 2562-4117 • Fax: +886-2 2562-4116 EMEA: Tel: +36 88 520 390 • Fax: +36 88 520 211 The Americas: Tel: +1-951 781-5500 • Fax: +1-951 781-5700 www.bourns.com *RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011. Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. This series is currently available but not recommended for new designs. |
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