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CD1607-B140 Datasheet(PDF) 1 Page - Bourns Electronic Solutions

Part # CD1607-B140
Description  Schottky Barrier Rectifier Chip Diode
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Manufacturer  BOURNS [Bourns Electronic Solutions]
Direct Link  http://www.bourns.com
Logo BOURNS - Bourns Electronic Solutions

CD1607-B140 Datasheet(HTML) 1 Page - Bourns Electronic Solutions

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CD1607-B140 / B140L Schottky Barrier Rectifier Chip Diode
Features
Lead free
RoHS compliant*
Low profile package
Surface mount
Very low forward voltage drop
General Information
The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly
smaller electronic components.
Bourns offers Schottky Rectifier Diodes for rectification applications, in compact chip package 1607 (Mini-SMA) size format, which offer PCB
real estate savings and are considerably smaller than competitive parts. The Schottky Rectifier Diodes offer a forward current of 1 A with a
repetitive peak reverse voltage of 40 V.
Bourns® Chip Diodes conform to JEDEC standards, easy to handle on standard pick and place equipment and their flat configuration makes
roll away much more difficult.
Parameter
Symbol
CD1607-
Unit
B140
B140L
Forward Voltage (Max.)
VF
0.5
0.4
V
(If = 1 A)
Typical Junction
CT
110
110
pF
Capacitance*
Reverse Current (Max.)
IR
0.5
1.0
mA
at Rated VR)
Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted)
How To Order
CD 1607 - B 1 40 L LF
Common Code
Chip Diode
Package
• 1607 = Mini-SMA
Model
B = Schottky Barrier Series
Average Forward Current (Io) Code
1 = 1 A (Code x 1000 mA = Average Forward Current)
Reverse Voltage (VR) Code
40 = 40 V
Forward Voltage Suffix
L = Low Forward Voltage Vf
Terminations
LF = 100 % Sn (lead free)
Absolute Ratings (@ TA = 25 °C Unless Otherwise Noted)
Parameter
Symbol
CD1607-
Unit
B140
B140L
Repetitive Peak
VRRM
40
40
V
Reverse Voltage
Reverse Voltage
VR
40
40
V
Maximum RMS Voltage VRMS
28
28
V
Avg. Forward Current
IO
A
1
Forward Current,
Surge Peak
Isurge
A
*
0
3
(60 Hz, 1 cycle)
Typical Thermal
RθJL
W
/
C
°
0
2
Resistance**
Storage Temperature
TSTG
C
°
0
5
1
+
o
t
5
5
-
Junction Temperature
TJ
C
°
5
2
1
+
o
t
5
5
-
* Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
** Thermal resistance junction to lead.
* Condition: 8.3 ms single half sine-wave superimposed on rate load
(JEDEC method).
Tel: +886-2 2562-4117 • Fax: +886-2 2562-4116
EMEA: Tel: +36 88 520 390 • Fax: +36 88 520 211
The Americas: Tel: +1-951 781-5500 • Fax: +1-951 781-5700
www.bourns.com
*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and
RoHS Recast 2011/65/EU June 8, 2011.
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different
applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
This series is currently available but
not recommended for new designs.


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