Philips Semiconductors

Product specification

Three quadrant triacs

BTA204W series B and C

high commutation

GENERAL DESCRIPTION

QUICK REFERENCE DATA

Passivated high commutation triacs in

SYMBOL

PARAMETER

MAX.

MAX.

MAX. UNIT

a plastic envelope suitable for surface

mounting intended for use in circuits

BTA204W- 500B

600B

800B

where high static and dynamic dV/dt

BTA204W- 500C

600C

800C

and high dI/dt can occur. These

V

DRM

Repetitive peak

500

600

800

V

devices will commutate the full rated

off-state voltages

rms current at the maximum rated

I

T(RMS)

RMS on-state current

1

1

1

A

junction temperature without the aid of

I

TSM

Non-repetitive peak on-state

10

10

10

A

a snubber.

current

PINNING - SOT223

PIN CONFIGURATION

SYMBOL

PIN

DESCRIPTION

1

main terminal 1

2

main terminal 2

3

gate

tab

main terminal 2

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

-500

-600

-800

V

DRM

Repetitive peak off-state

-

500

1

600

1

800

V

voltages

I

T(RMS)

RMS on-state current

full sine wave;

-

1

A

T

I

TSM

Non-repetitive peak

full sine wave;

on-state current

T

surge

t = 20 ms

-

10

A

t = 16.7 ms

-

11

A

I

t = 10 ms

-

0.5

A

dI

Repetitive rate of rise of

I

100

A/

µs

on-state current after

I

triggering

dI

I

GM

Peak gate current

-

2

A

V

GM

Peak gate voltage

-

5

V

P

GM

Peak gate power

-

5

W

P

G(AV)

Average gate power

over any 20 ms

-

0.5

W

period

T

stg

Storage temperature

-40

150

˚C

T

j

Operating junction

-

125

˚C

temperature

T1

T2

G

4

1

23

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may

switch to the on-state. The rate of rise of current should not exceed 6 A/

µs.

December 1998

1

Rev 1.000