© Semiconductor Components Industries, LLC, 2014

November, 2014 − Rev. 3

1

Publication Order Number:

BC847ATT1/D

BC847ATT1, BC847BTT1,

BC847CTT1

General Purpose

Transistors

NPN Silicon

These transistors are designed for general purpose amplifier

applications. They are housed in the SC−75/SOT−416 package which

is designed for low power surface mount applications.

Features

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

Rating

Symbol

Max

Unit

Collector−Emitter Voltage

45

V

Collector−Base Voltage

50

V

Emitter−Base Voltage

6.0

V

Collector Current − Continuous

100

mAdc

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation,

FR−4 Board (Note 1)

Derated above 25

°C

200

1.6

mW

mW/

°C

Thermal Resistance,

Junction−to−Ambient (Note 1)

600

°C/W

Total Device Dissipation,

FR−4 Board (Note 2)

Derated above 25

°C

300

2.4

mW

mW/

°C

Thermal Resistance,

Junction−to−Ambient (Note 2)

400

°C/W

Junction and Storage

Temperature Range

−55 to

+150

°C

1. FR−4 @ min pad.

2. FR−4 @ 1.0

× 1.0 in pad.

CASE 463

SC−75/SOT−416

STYLE 1

MARKING DIAGRAM

3

2

1

COLLECTOR

3

1

BASE

2

EMITTER

http://onsemi.com

XXM

G

G

XX = Device Code

M = Date Code

G = Pb−Free Package

See detailed ordering, marking and shipping information in the

package dimensions section on page 5 of this data sheet.

ORDERING INFORMATION

(Note: Microdot may be in either location)