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BD243BG Datasheet(PDF) 1 Page - ON Semiconductor |
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BD243BG Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 6 page © Semiconductor Components Industries, LLC, 2014 November, 2014 − Rev. 15 1 Publication Order Number: BD243B/D BD243B, BD243C (NPN), BD244B, BD244C (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use in general purpose amplifier and switching applications. Features • High Current Gain Bandwidth Product • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage BD243B, BD244B BD243C, BD244C VCEO 80 100 Vdc Collector−Base Voltage BD243B, BD244B BD243C, BD244C VCB 80 100 Vdc Emitter−Base Voltage VEB 5.0 Vdc Collector Current − Continuous IC 6 Adc Collector Current − Peak ICM 10 Adc Base Current IB 2.0 Adc Total Device Dissipation @ TC = 25°C Derate above 25 °C PD 65 0.52 W W/ °C Operating and Storage Junction Temperature Range TJ, Tstg −65 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristics Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 1.92 °C/W *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 6 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 80−100 VOLTS 65 WATTS www.onsemi.com MARKING DIAGRAM BD24xy = Device Code x = 3 or 4 y = B or C A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package BD24xyG AY WW TO−220 CASE 221A STYLE 1 1 2 3 4 1 BASE EMITTER 3 COLLECTOR 2, 4 1 BASE EMITTER 3 COLLECTOR 2, 4 PNP NPN Device Package Shipping ORDERING INFORMATION BD243BG TO−220 (Pb−Free) 50 Units / Rail BD243CG TO−220 (Pb−Free) 50 Units / Rail BD244BG TO−220 (Pb−Free) 50 Units / Rail BD244CG TO−220 (Pb−Free) 50 Units / Rail |
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