© Semiconductor Components Industries, LLC, 2014

November, 2014 − Rev. 15

1

Publication Order Number:

BD243B/D

BD243B, BD243C (NPN),

BD244B, BD244C (PNP)

Complementary Silicon

Plastic Power Transistors

These devices are designed for use in general purpose amplifier and

switching applications.

Features

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector−Emitter Voltage

BD243B, BD244B

BD243C, BD244C

80

100

Vdc

Collector−Base Voltage

BD243B, BD244B

BD243C, BD244C

80

100

Vdc

Emitter−Base Voltage

5.0

Vdc

Collector Current − Continuous

6

Adc

Collector Current − Peak

10

Adc

Base Current

2.0

Adc

Total Device Dissipation

Derate above 25

°C

65

0.52

W

W/

°C

Operating and Storage Junction

Temperature Range

−65 to +150

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS

Characteristics

Symbol

Max

Unit

Thermal Resistance, Junction−to−Case

1.92

°C/W

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

6 AMPERE

POWER TRANSISTORS

COMPLEMENTARY SILICON

80−100 VOLTS

65 WATTS

www.onsemi.com

MARKING DIAGRAM

BD24xy =

Device Code

x = 3 or 4

y = B or C

A

=

Assembly Location

Y

=

Year

WW

=

Work Week

G

=

Pb−Free Package

BD24xyG

AY WW

TO−220

CASE 221A

STYLE 1

1

2

3

4

1

BASE

EMITTER 3

COLLECTOR 2, 4

1

BASE

EMITTER 3

COLLECTOR 2, 4

PNP

NPN

Device

Package

Shipping

ORDERING INFORMATION

BD243BG

TO−220

(Pb−Free)

50 Units / Rail

BD243CG

TO−220

(Pb−Free)

50 Units / Rail

BD244BG

TO−220

(Pb−Free)

50 Units / Rail

BD244CG

TO−220

(Pb−Free)

50 Units / Rail