BUL45D2_14 datasheet(6/11 Pages) ONSEMI

Part #	BUL45D2

Description	High Speed, High Gain Bipolar NPN Power Transistor

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BUL45D2G

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6

TYPICAL SWITCHING CHARACTERISTICS

Figure 13. Resistive Switch Time, ton

1000

400

0

4

1.5

0.5

IC, COLLECTOR CURRENT (AMPS)

3.5

800

600

200

TJ = 125°C

TJ = 25°C

IC/IB = 10

IC/IB = 5

IBon = IBoff

VCC = 300 V

PW = 20

ms

1

2

2.5

3

Figure 14. Resistive Switch Time, toff

5

0

IC, COLLECTOR CURRENT (AMPS)

3

4

2

1

TJ = 125°C

TJ = 25°C

IC/IB = 10

IC/IB = 5

IBon = IBoff

VCC = 300 V

PW = 20

ms

4

1.5

0.5

3.5

1

2

2.5

3

Figure 15. Inductive Storage Time,

tsi @ IC/IB = 5

4

2

0

4

1

0

IC, COLLECTOR CURRENT (AMPS)

3

1

2

TJ = 125°C

TJ = 25°C

IBon = IBoff

VCC = 15 V

VZ = 300 V

LC = 200 mH

IC/IB = 5

Figure 16. Inductive Storage Time,

tsi @ IC/IB = 10

5

2

0

4

1

0

IC, COLLECTOR CURRENT (AMPS)

3

1

2

TJ = 125°C

TJ = 25°C

IBon = IBoff

VCC = 15 V

VZ = 300 V

LC = 200 mH

4

Figure 17. Inductive Switching,

tc & tfi @ IC/IB = 5

600

200

0

4

1

0

IC, COLLECTOR CURRENT (AMPS)

3

400

300

100

500

2

TJ = 125°C

TJ = 25°C

IBon = IBoff

VCC = 15 V

VZ = 300 V

LC = 200 mH

Figure 18. Inductive Switching,

tfi @ IC/IB = 10

tc

tfi

400

200

0

4

1

0

IC, COLLECTOR CURRENT (AMPS)

3

300

100

2

TJ = 125°C

TJ = 25°C

IBoff = IBon

VCC = 15 V

VZ = 300 V

LC = 200 mH

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