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MJE5730G Datasheet(PDF) 2 Page - ON Semiconductor |
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MJE5730G Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 6 page MJE5730, MJE5731, MJE5731A www.onsemi.com 2 ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 1) (IC = 30 mAdc, IB = 0) MJE5730 MJE5731 MJE5731A VCEO(sus) 300 350 375 − − − Vdc Collector Cutoff Current (VCE = 200 Vdc, IB = 0) MJE5730 (VCE = 250 Vdc, IB = 0) MJE5731 (VCE = 300 Vdc, IB = 0) MJE5731A ICEO − − − 1.0 1.0 1.0 mAdc Collector Cutoff Current (VCE = 300 Vdc, VBE = 0) MJE5730 (VCE = 350 Vdc, VBE = 0) MJE5731 (VCE = 400 Vdc, VBE = 0) MJE5731A ICES − − − 1.0 1.0 1.0 mAdc Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO − 1.0 mAdc ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 0.3 Adc, VCE = 10 Vdc) (IC = 1.0 Adc, VCE = 10 Vdc) hFE 30 10 150 − − Collector−Emitter Saturation Voltage (IC = 1.0 Adc, IB = 0.2 Adc) VCE(sat) − 1.0 Vdc Base−Emitter On Voltage (IC = 1.0 Adc, VCE = 10 Vdc) VBE(on) − 1.5 Vdc DYNAMIC CHARACTERISTICS Current Gain − Bandwidth Product (IC = 0.2 Adc, VCE = 10 Vdc, f = 2.0 MHz) fT 10 − MHz Small−Signal Current Gain (IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 kHz) hfe 25 − − Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. TJ = 25°C 0.03 Figure 1. DC Current Gain IC, COLLECTOR CURRENT (AMPS) 2.0 0.02 0.03 0.05 0.1 0.2 0.5 1.0 2.0 30 10 3.0 Figure 2. Collector−Emitter Saturation Voltage 0.02 IC, COLLECTOR CURRENT (AMPS) 0 0.05 0.3 1.2 5.0 VCE = 10 V 1.0 2.0 1.4 1 TJ = 150°C 20 0.5 0.3 0.8 0.6 0.1 VCE(sat)) @ IC/IB = 5.0 0.2 0.2 0.4 25 °C -55 °C 100 50 200 150 °C -55 °C |
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