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R1121N50B1-TR-FE Datasheet(PDF) 4 Page - RICOH electronics devices division |
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R1121N50B1-TR-FE Datasheet(HTML) 4 Page - RICOH electronics devices division |
4 / 18 page R1121N 4 ELECTRICAL CHARACTERISTICS • R1121Nxx1A Topt=25 °C Symbol Item Conditions Min. Typ. Max. Unit VOUT Output Voltage VIN = Set VOUT + 1V 1mA < = IOUT < = 30mA VOUT ×0.98 VOUT ×1.02 V IOUT Output Current Refer to the ELECTRICAL CHARACTERISTICS by OUTPUT VOLTAGE ΔVOUT/ΔIOUT Load Regulation VIN = Set VOUT + 1V 1mA < = IOUT < = 80mA 12 40 mV VDIF Dropout Voltage Refer to the ELECTRICAL CHARACTERISTICS by OUTPUT VOLTAGE ISS Supply Current VIN = Set VOUT + 1V 35 70 μA Istandby Supply Current (Standby) VIN = VCE = Set VOUT + 1V 0.1 1.0 μA ΔVOUT/ΔVIN Line Regulation Set VOUT +0.5V < = VIN < = 8.0V IOUT = 30mA 0.05 0.20 %/V RR Ripple Rejection f = 1kHz, Ripple 0.5Vp-p VIN = Set VOUT + 1V 70 dB VIN Input Voltage 2.0 8.0 V ΔVOUT/ ΔTopt Output Voltage Temperature Coefficient IOUT = 30mA −40°C < = Topt < = 85°C ±100 ppm/ °C ISC Short Current Limit VOUT = 0V 50 mA RPU CE Pull-up Resistance 2.5 5.0 10.0 M Ω VCEH CE Input Voltage “H” 1.5 VIN V VCEL CE Input Voltage “L” 0.00 0.25 V en Output Noise BW =10Hz to 100kHz 30 μVrms RECOMMENDED OPERATING CONDITIONS (ELECTRICAL CHARACTERISTICS) All of electronic equipment should be designed that the mounted semiconductor devices operate within the recommended operating conditions. The semiconductor devices cannot operate normally over the recommended operating conditions, even if when they are used over such conditions by momentary electronic noise or surge. And the semiconductor devices may receive serious damage when they continue to operate over the recommended operating conditions. |
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