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BGU7224 Datasheet(PDF) 4 Page - NXP Semiconductors |
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BGU7224 Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 20 page BGU7224 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved. Product data sheet Rev. 2 — 15 December 2014 4 of 20 NXP Semiconductors BGU7224 2.4 GHz ISM SiGe:C low-noise amplifier MMIC with bypass 7. Thermal characteristics 8. Static characteristics 9. Dynamic characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Typ Unit Rth(j-case) thermal resistance from junction to case 250 K/W Table 7. Static characteristics Symbol Parameter Conditions Min Typ Max Unit VCC supply voltage RF input, AC coupled 3.0 3.3 3.6 V ICC supply current Pi = 30 dBm gain mode - 13 - mA bypass mode - 2 - A II(CTRL) input current on pin CTRL gain mode - 50 - A Tamb ambient temperature 40 +25 +85 C Table 8. Dynamic characteristics Tamb =25 C; VCC = 3.3 V; ZS = ZL = 50 ; Pi = 30 dBm unless otherwise specified. All measurements done on application board (with a DC-decoupling capacitor of 4.7 nF placed close to VCC [pin 6] and a 8.2 nH matching shunt inductor at RF_IN) with SMA connectors as reference plane. Symbol Parameter Conditions Min Typ Max Unit f frequency [1] 2400 - 2500 MHz Gp power gain gain mode [2] 13 15 17 dB bypass mode [2] - 5.5 - dB RLin input return loss gain mode - 10 - dB bypass mode - 13 - dB RLout output return loss gain mode - 11 - dB bypass mode - 13 - dB ISL isolation gain mode - 22 - dB Gflat gain flatness bandwidth across 40 MHz gain mode - 0.2 - dB bypass mode - 0.2 - dB Pi(1dB) input power at 1 dB gain compression gain mode - 3- dBm IP3I input third-order intercept point two-tone; 5 MHz spacing Pi = 20 dBm; gain mode - 5.5 - dBm Pi = 3 dBm; bypass mode - 34 - dBm NF noise figure gain mode [2] -1.0 -dB |
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