ABSOLUTE MAXIMUM RATINGS

ELECTRICAL CHARACTERISTICS

T

=25°C unless otherwise specified

Symbol

Parameter

Test Conditions

Values

Unit

V

Maximum D.C. Reverse Voltage

R

1200

V

V

Maximum Repetitive Reverse Voltage

RRM

1200

V

I

Average Forward Current

F(AV)

60

=110°C

A

I

RMS Forward Current

F(RMS)

84

=110°C

A

I

Non-Repetitive Surge Forward Current

FSM

500

=45°C, t=10ms, 50Hz, Sine

A

P

Power Dissipation

D

312

W

T

Junction Temperature

J

-40 to +150

°C

T

Storage Temperature Range

STG

-40 to +150

°C

Torque

Module-to-Sink

Recommended（M3）

1.1

N·m

R

Thermal Resistance

θJC

Junction-to-Case

0.4

°C /W

Weight

6.0

g

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

I

Reverse Leakage Current

RM

--

=1200V

--

500

µA

--

=125°C

--

5

mA

V

Forward Voltage

F

--

=60A

2.10

--

V

--

=125°C

1.75

V

t

Reverse Recovery Time

rr

--

/dt=-2

00A/μs

40

--

ns

t

Reverse Recovery Time

rr

--

=25°C

90

--

ns

I

Max. Reverse Recovery Current

RRM

--

7.5

--

A

t

Reverse Recovery Time

rr

--

=125°C

320

--

ns

I

Max. Reverse Recovery Current

RRM

--

14

--

A

®

APT60D120BG

Pb Free Plating Product

APT60D120BG

60 Ampere,1200 Volt SwitchMode Single Fast Recovery Epitaxial Diode

Pb

·

Ultrafast Recovery Time

·

Soft Recovery Characteristics

·

Low Recovery Loss

·

Low Forward Voltage

·

High Surge Current Capability

·

Low Leakage Current

APPLICATION

GENERAL DESCRIPTION

PRODUCT FEATURE

APT60D120BG using the lastest FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristic.

TO-247-2L

Internal Configuration

Cathode(Bottom Side Metal Heatsink)

Cathode

Anode

Base Backside

© 2006 Thinki Semiconductor Co.,Ltd.

http://www.thinkisemi.com/

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Rev.05