NJT4031N_13 datasheet(3/5 Pages) ONSEMI

Part #	NJT4031N

Description	Bipolar Power Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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NJT4031N, NJV4031NT1G, NJV4031NT3G

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TYPICAL CHARACTERISTICS

Figure 2. DC Current Gain

Figure 3. DC Current Gain

IC, COLLECTOR CURRENT (A)

10

1

0.1

0.01

0.001

0

100

200

300

400

500

600

10

1

0.1

0.01

0.001

0

100

200

300

500

600

700

Figure 4. Collector−Emitter Saturation Voltage

Figure 5. Collector−Emitter Saturation Voltage

IC, COLLECTOR CURRENT (A)

10

1

0.1

0.01

0.001

0.01

0.1

1

10

1

0.1

0.01

0.001

0.01

0.1

1

Figure 6. Collector Saturation Region

Figure 7. VBE(on) Voltage

IB, BASE CURRENT (A)

IC, COLLECTOR CURRENT (A)

0.001

0.0001

0.01

0.1

1

10

1

0.1

0.01

0.001

0

0.2

0.4

0.6

1.2

VCE = 1 V

150°C

−55°C

25°C

VCE = 4 V

150°C

−55°C

25°C

400

IC/IB = 10

150°C

−55°C

25°C

IC/IB = 50

150°C

−55°C

25°C

0.01

0.1

1.0

0.8

1.0

VCE = 2 V

150°C

−55°C

25°C

IC = 3 A

0.1 A

1 A

0.5 A

2 A

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