Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.NET

X  

NJT4031NT1G Datasheet(PDF) 1 Page - ON Semiconductor

Part # NJT4031NT1G
Description  Bipolar Power Transistors
Download  5 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NJT4031NT1G Datasheet(HTML) 1 Page - ON Semiconductor

  NJT4031NT1G Datasheet HTML 1Page - ON Semiconductor NJT4031NT1G Datasheet HTML 2Page - ON Semiconductor NJT4031NT1G Datasheet HTML 3Page - ON Semiconductor NJT4031NT1G Datasheet HTML 4Page - ON Semiconductor NJT4031NT1G Datasheet HTML 5Page - ON Semiconductor  
Zoom Inzoom in Zoom Outzoom out
 1 / 5 page
background image
© Semiconductor Components Industries, LLC, 2013
August, 2013 − Rev. 4
1
Publication Order Number:
NJT4031N/D
NJT4031N,
NJV4031NT1G,
NJV4031NT3G
Bipolar Power Transistors
NPN Silicon
Features
Epoxy Meets UL 94, V−0 @ 0.125 in
NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
VCEO
40
Vdc
Collector−Base Voltage
VCB
40
Vdc
Emitter−Base Voltage
VEB
6.0
Vdc
Base Current − Continuous
IB
1.0
Adc
Collector Current − Continuous
IC
3.0
Adc
Collector Current − Peak
ICM
5.0
Adc
ESD − Human Body Model
HBM
3B
V
ESD − Machine Model
MM
C
V
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Power Dissipation
Total PD @ TA = 25°C (Note 1)
Total PD @ TA = 25°C (Note 2)
PD
2.0
0.80
W
Thermal Resistance, Junction−to−Case
Junction−to−Ambient (Note 1)
Junction−to−Ambient (Note 2)
RqJA
RqJA
64
155
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8” from case for 5 seconds
TL
260
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
−55 to
+ 150
°C
1. Mounted on 1” sq. (645 sq. mm) Collector pad on FR−4 bd material.
2. Mounted on 0.012” sq. (7.6 sq. mm) Collector pad on FR−4 bd material.
SOT−223
CASE 318E
STYLE 1
MARKING
DIAGRAM
NPN TRANSISTOR
3.0 AMPERES
40 VOLTS, 2.0 WATTS
http://onsemi.com
1
4031NG
AYW
A
= Assembly Location
Y
Year
W
= Work Week
4031N = Specific Device Code
G
= Pb−Free Package
COLLECTOR 2,4
BASE
1
EMITTER 3
Device
Package
Shipping
ORDERING INFORMATION
NJT4031NT1G
SOT−223
(Pb−Free)
1000 / Tape &
Reel
NJT4031NT3G
SOT−223
(Pb−Free)
4000 / Tape &
Reel
NJV4031NT1G
NJV4031NT3G
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1
2
3
4


Similar Part No. - NJT4031NT1G

ManufacturerPart #DatasheetDescription
logo
ON Semiconductor
NJT4031NT1G ONSEMI-NJT4031NT1G Datasheet
89Kb / 6P
   Bipolar Power Transistors NPN Silicon
August, 2007 - Rev. 0
NJT4031NT1G ONSEMI-NJT4031NT1G Datasheet
110Kb / 6P
   Bipolar Power Transistors
September, 2010 ??Rev. 1
More results

Similar Description - NJT4031NT1G

ManufacturerPart #DatasheetDescription
logo
ON Semiconductor
MMJT350T1G ONSEMI-MMJT350T1G_13 Datasheet
114Kb / 4P
   Bipolar Power Transistors
August, 2013 ??Rev. 7
NSS40300MZ4 ONSEMI-NSS40300MZ4_10 Datasheet
114Kb / 7P
   Bipolar Power Transistors
September, 2010 ??Rev. 1
MMJT350T1G ONSEMI-MMJT350T1G Datasheet
108Kb / 4P
   Bipolar Power Transistors
September, 2010 ??Rev. 5
NJT4030P ONSEMI-NJT4030P_10 Datasheet
279Kb / 7P
   Bipolar Power Transistors
September, 2010 -- Rev. 1
logo
List of Unclassifed Man...
2SC2818 ETC1-2SC2818 Datasheet
55Kb / 2P
   Power Bipolar Transistors
logo
Motorola, Inc
MMJT9410 MOTOROLA-MMJT9410 Datasheet
95Kb / 4P
   Bipolar Power Transistors
MMJT9435 MOTOROLA-MMJT9435 Datasheet
94Kb / 4P
   Bipolar Power Transistors
logo
ON Semiconductor
MMJT350T1 ONSEMI-MMJT350T1 Datasheet
57Kb / 4P
   Bipolar Power Transistors
October, 2003 ??Rev. 1
NJT4031N ONSEMI-NJT4031N_10 Datasheet
110Kb / 6P
   Bipolar Power Transistors
September, 2010 ??Rev. 1
NJT4030P ONSEMI-NJT4030P_13 Datasheet
112Kb / 5P
   Bipolar Power Transistors
November, 2013 ??Rev. 5
More results


Html Pages

1 2 3 4 5


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.NET
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com