MTB9DP03V8-0-T6-G datasheet(1/9 Pages) CYSTEKEC

Part #	MTB9DP03V8-0-T6-G

Description	P-Channel Enhancement Mode Power MOSFET

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Manufacturer	CYSTEKEC [Cystech Electonics Corp.]

Direct Link	http://www.cystekec.com

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CYStech Electronics Corp.

Spec. No. : C050V8

Issued Date : 2017.01.24

Revised Date :

Page No. : 1/9

MTB9D0P03V8

CYStek Product Specification

P-Channel Enhancement Mode Power MOSFET

MTB9D0P03V8

BVDSS

-30V

-44.0A

ID@ TC=25

°C, VGS=-10V

ID@ TA=25

°C, VGS=-10V

-11.6A

Features

7.4mΩ(typ.)

RDSON(MAX)@VGS=-10V, ID=-10A

• Simple drive requirement

• Low on-resistance

12.0mΩ(typ.)

RDSON(MAX)@VGS=-4.5V, ID=-8A

• Fast switching speed

• Pb-free lead plating package

Equivalent Circuit

Outline

MTB9D0P03V8

DFN3×3

Ordering Information

Device

Package

Shipping

MTB9DP03V8-0-T6-G

DFN3×3

(Pb-free lead plating and halogen-free package)

3000 pcs / Tape & Reel

Pin 1

G：Gate S：Source D：Drain

Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and

green compound products

Packing spec, T6 : 3000 pcs / tape & reel,13” reel

Product rank, zero for no rank products

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MTB9DP03V8-0-T6-G Datasheet(PDF) 1 Page - Cystech Electonics Corp.

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