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MTB9DP03V8-0-T6-G Datasheet(PDF) 2 Page - Cystech Electonics Corp. |
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MTB9DP03V8-0-T6-G Datasheet(HTML) 2 Page - Cystech Electonics Corp. |
2 / 9 page CYStech Electronics Corp. Spec. No. : C050V8 Issued Date : 2017.01.24 Revised Date : Page No. : 2/9 MTB9D0P03V8 CYStek Product Specification Absolute Maximum Ratings (Ta=25 °C) Parameter Symbol Limits Unit Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±20 V Continuous Drain Current @ TC=25 °C, VGS=-10V -44.0 Continuous Drain Current @ TC=100 °C, VGS=-10V -27.8 Continuous Drain Current @ TA=25 °C, VGS=-10V -11.6 Continuous Drain Current @ TA=70 °C, VGS=-10V ID -9.3 Pulsed Drain Current IDM -176 *1 Avalanche Current @ L=0.1mH IAS -36 A Avalanche Energy @ L=1mH, ID=-16A, VDD=-15V EAS 128 *4 Repetitive Avalanche Energy @ L=0.05mH EAR 4.1 *2 mJ TC=25℃ 36 TC=100℃ 14 TA=25℃ 2.5 *3 Total Power Dissipation TA=70℃ PD 1.6 *3 W Operating Junction and Storage Temperature Range Tj, Tstg -55~+150 °C Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max RθJC 3.5 Thermal Resistance, Junction-to-ambient, max RθJA 50 *3 °C/W Note : 1. Pulse width limited by maximum junction temperature 2. Duty cycle≤1% 3. Surface mounted on 1 in² copper pad of FR-4 board, t≤10s ; 125 °C/W when mounted on minimum copper pad. 4. 100% tested by conditions of L=0.1mH, IAS=-10A, VGS=-10V, VDD=-15V Electrical Characteristics (Tj=25 °C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS -30 - - VGS=0V, ID=-250μA VGS(th) -1 - -2.5 V VDS=VGS, ID=-250μA IGSS - - ±100 nA VGS=±20V, VDS=0V - - -1 VDS=-24V, VGS=0V IDSS - - -10 μA VDS=-24V, VGS=0V, Tj=125 °C - 7.4 10 VGS=-10V, ID=-10A RDS(ON) *1 - 12 17 m Ω VGS=-4.5V, ID=-8A GFS *1 - 18 - S VDS=-10V, ID=-10A |
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