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V6309LSP3B Datasheet(PDF) 2 Page - EM Microelectronic - MARIN SA |
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V6309LSP3B Datasheet(HTML) 2 Page - EM Microelectronic - MARIN SA |
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2 / 6 page  R V6309 V6319 Copyright © 2006, EM Microelectronic-Marin SA 03/06 – rev.G 2 www.emmicroelectronic.com Absolute Maximum Ratings Parameter Symbol Conditions Terminal voltage to VSS VDD -0.3V to + 6.0V Min. voltage at RESET or RESET Vmin -0.3V Maximum voltage at RESET or RESET Vmax VCC + 0.3V Input current at VDD Imin 20 mA Output current at RESET or RESET Imax 20 mA Rate of rise at VDD tR 100Vµs Continuous power dissipation at TA = +70°C for SOT-23 (>70°C derate by 4 mW/°C) Pmax 320 mW Operating temperature range TA -40 to +125°C Storage temperature range TST -65°C to +150°C Table 2 Stresses above these listed maximum ratings may cause permanent damages to the device. Exposure beyond specified operating conditions may affect device reliability or cause malfunction. Handling Procedures This device has built-in protection against high static voltages or electric fields; however, it is advised that normal precautions be taken as for any other CMOS component. Unless otherwise specified, proper operation can only occur when all terminal voltages are kept within the voltage range. Electrical Characteristics VDD = full range, TA = -40 to +125°C, unless otherwise specified, typical values at TA = +25°C, VDD = 5V for versions L and M, VDD = 3.3V for versions T and S, VDD = 3 V for R. (Production testing done at TA = +25°C and 85°C, over temperature limits guaranteed by design only) Parameter Symbol Test Conditions Min. Typ. Max. Unit VDD range VDD TA = 0 to +70°C 1.0 5.5 V TA = -40 to +105C 1.2 5.5 V TA = -40 to +125°C 1.6 5.5 V Supply current versions L, M ICC VDD < 5.5V 26 60 µA versions R, S, T VDD < 3.6V 16 50 µA RESET threshold 1) version L VTH TA = +25°C 4.56 4.63 4.70 V TA = -40 to +125°C 4.40 4.79 V version M TA = +25°C 4.31 4.38 4.45 V TA = -40 to +125°C 4.16 4.53 V version T TA = +25°C 3.04 3.08 3.11 V TA = -40 to +125°C 2.92 3.17 V version S TA = +25°C 2.89 2.93 2.96 V TA = -40 to +125°C 2.78 3.02 V version R TA = +25°C 2.59 2.63 2.66 V TA = -40 to +125°C 2.50 2.72 V Reset threshold temp. coefficient -200 ppm/°C VDD to reset delay 1) VDD = VTH to (VTH – 100mV) 7 µs Reset active timeout period TA = -40 to °125°C 140 330 590 ms RESET output voltage low for V6309 VOL VDD > 1.0V, ISINK = 50µA 0.3 V versions R, S, T VDD = VTH min., ISINK = 1.2mA 0.3 V versions L, M VDD = VTH min., ISINK = 3.2mA 0.4 V RESET output voltage high for V6309 versions R, S, T VOH VDD = VTH max., ISOURCE = 500µA 0.8 VDD V versions L, M VDD = VTH max., ISOURCE = 800µA VDD-1.5V V RESET output voltage low for V6319 versions R, S, T VOL VDD = VTH max., ISINK = 1.2mA 0.3 V versions L, M VDD = VTH max., ISINK = 3.2mA 0.4 V RESET output voltage high for V6319 VOH 1.8V < VDD < VTH min., ISOURCE = 150µA 0.8 VDD V Table 3 1) RESET output for V6309 , RESET output for V6319 |
Similar Part No. - V6309LSP3B |
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Similar Description - V6309LSP3B |
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