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FDW2515NZ Datasheet(HTML) 3 Page - Fairchild Semiconductor

Part No. FDW2515NZ
Description  Common Drain N-Channel 2.5V specified PowerTrench MOSFET
Download  6 Pages
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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FDW2515NZ Datasheet(HTML) 3 Page - Fairchild Semiconductor

   
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FDW2515NZ Rev C
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
1.3
A
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V,
IS = 1.3 A
(Note 2)
0.7
1.2
V
trr
Diode Reverse Recovery Time
17
nS
Qrr
Diode Reverse Recovery Charge
IF = 5.8 A
diF/dt = 100 A/µs
(Note 2)
5
nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a)
77°C/W when
mounted on a 1in
2 pad
of 2 oz copper
b)
114°C/W when mounted
on a minimum pad of 2 oz
copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300
µs, Duty Cycle < 2.0%
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.


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