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FDW2515NZ Datasheet(HTML) 1 Page - Fairchild Semiconductor

Part No. FDW2515NZ
Description  Common Drain N-Channel 2.5V specified PowerTrench MOSFET
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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FDW2515NZ Datasheet(HTML) 1 Page - Fairchild Semiconductor

   
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February 2003
2003 Fairchild Semiconductor Corporation
FDW2515NZ Rev C
FDW2515NZ
Common Drain N-Channel 2.5V specified PowerTrench
MOSFET
General Description
This N-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild's Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (2.5V – 12V).
Applications
• Li-Ion Battery Pack
Features
• 5.8 A, 20 V
RDS(ON) = 28 m
Ω @ V
GS = 4.5 V
RDS(ON) = 38 m
Ω @ V
GS = 2.5 V
• Extended V
GSS range (
±12V) for battery applications
• ESD protection diode (note 3)
• High performance trench technology for extremely
low RDS(ON) @ VGS = 2.5 V
• Low profile TSSOP-8 package
D1
S1
S1
G1
D2
S2
S2
G2
TSSOP-8
Pin 1
Absolute Maximum Ratings
TA=25
oC unless otherwise noted
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
20
V
VGSS
Gate-Source Voltage
±12
V
ID
Drain Current
– Continuous
(Note 1a)
5.8
A
– Pulsed
20
Power Dissipation for Single Operation
(Note 1a)
1.6
PD
(Note 1b)
1.1
W
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +150
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
77
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1b)
114
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
2515NZ
FDW2515NZ
13’’
12mm
3000 units


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