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FDW2515NZ Datasheet(HTML) 2 Page - Fairchild Semiconductor

Part No. FDW2515NZ
Description  Common Drain N-Channel 2.5V specified PowerTrench MOSFET
Download  6 Pages
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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FDW2515NZ Datasheet(HTML) 2 Page - Fairchild Semiconductor

   
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FDW2515NZ Rev C
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
VGS = 0 V,
ID = 250
µA
20
V
∆BVDSS
∆T
J
Breakdown Voltage Temperature
Coefficient
ID = 250
µA, Referenced to 25°C
10
mV/
°C
IDSS
Zero Gate Voltage Drain Current
VDS = 16 V,
VGS = 0 V
1
µA
IGSS
Gate–Body Leakage
VGS =
±12 V, V
DS = 0 V
±10
µA
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS,
ID = 250
µA
0.6
1.0
1.5
V
∆VGS(th)
∆T
J
Gate Threshold Voltage
Temperature Coefficient
ID = 250
µA, Referenced to 25°C
–0.3
mV/
°C
RDS(on)
Static Drain–Source
On–Resistance
VGS = 4.5 V,
ID = 5.8 A
VGS = 2.5 V,
ID = 5.0 A
VGS = 4.5 V, ID = 5.8 A, TJ=125
°C
22
29
29
28
38
40
m
ID(on)
On–State Drain Current
VGS = 4.5 V,
VDS = 5 V
10
A
gFS
Forward Transconductance
VDS = 5 V,
ID = 5.8 A
25
S
Dynamic Characteristics
Ciss
Input Capacitance
745
pF
Coss
Output Capacitance
205
pF
Crss
Reverse Transfer Capacitance
VDS = 10 V,
V GS = 0 V,
f = 1.0 MHz
115
pF
RG
Gate Resistance
VGS = 15 mV,
f = 1.0 MHz
1.6
Switching Characteristics (Note 2)
td(on)
Turn–On Delay Time
9
17
Ns
tr
Turn–On Rise Time
6
11
Ns
td(off)
Turn–Off Delay Time
15
28
Ns
tf
Turn–Off Fall Time
VDD = 10 V,
ID = 1 A,
VGS = 4.5 V,
RGEN = 6
8
16
Ns
Qg
Total Gate Charge
9
12
nC
Qgs
Gate–Source Charge
1.5
nC
Qgd
Gate–Drain Charge
VDS = 10 V,
ID = 5.8 A,
VGS = 5 V
2.4
nC


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