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IRF6691 Datasheet(PDF) 1 Page - International Rectifier |
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IRF6691 Datasheet(HTML) 1 Page - International Rectifier |
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1 / 10 page  www.irf.com 1 11/3/04 IRF6691 HEXFET® Power MOSFET plus Schottky Diode Notes through are on page 10 DirectFET ISOMETRIC MT l Application Specific MOSFETs l Integrates Monolithic Trench Schottky Diode l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l Low Reverse Recovery Losses l Low Switching Losses l Low Reverse Recovery Charge and Low Vf l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques Description The IRF6691 combines IRs industry leading DirectFET package technology with the latest monolithic die technology, which integrates MOSFET plus free-wheeling Schottky diode. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%. The IRF6691 is characterized with reduced on resistance (R DS(on)), reverse recovery charge (Qrr) and source to drain voltage (V SD) to reduce conduction, reverse recovery and deadtime losses. These reduced total losses along with high Cdv/dt immunity make this product ideal for high efficiency DC-DC converters that power the latest generation of proces- sors operating at higher frequencies. The IRF6691 has been optimized for parameters that are critical for synchronous MOSFET sockets operating in 12 volt buss converters. Applicable DirectFET Package/Layout Pad (see p.8,9 for details) SQ SX ST MQ MX MT VDSS RDS(on) max Qg(typ.) 20V 2.5m Ω@VGS = 4.5V 47nC 1.8m Ω@VGS = 10V Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage V VGS Gate-to-Source Voltage ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TA = 25°C Continuous Drain Current, VGS @ 10V A ID @ TA = 70°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current c PD @TA = 25°C Power Dissipation g PD @TA = 70°C Power Dissipation g W PD @TC = 25°C Power Dissipation Linear Derating Factor W/°C TJ Operating Junction and °C TSTG Storage Temperature Range Thermal Resistance Parameter Typ. Max. Units RθJA Junction-to-Ambient fj ––– 45 RθJA Junction-to-Ambient gj 12.5 ––– RθJA Junction-to-Ambient hj 20 ––– °C/W RθJC Junction-to-Case ij ––– 1.4 RθJ-PCB Junction-to-PCB Mounted 1.0 ––– -40 to + 150 2.8 0.022 1.8 89 Max. 32 26 260 ±12 20 180 PD - 95867A |
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