ADG821BRM datasheet(2/12 Pages) AD

Part #	ADG821BRM

Description	<1 ??CMOS 1.8 V to 5.5 V, Dual SPST Switches

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REV. 0

–2–

ADG821/ADG822/ADG823–SPECIFICATIONS1

–40 C to

– 40 C to

Parameter

25 C

+85 C

+125 C

2

Unit

Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range

0 V to VDD

V

On Resistance (RON)

0.5

Ω typ

VS = 0 V to VDD, IS = 100 mA;

0.6

0.7

0.8

Ω max

Test Circuit 1

On Resistance Match Between

Channels (

∆R

ON)0.16

Ω typ

VS = 0 V to VDD, IS = 100 mA

0.2

0.25

0.28

Ω max

On Resistance Flatness (RFLAT(ON))0.15

Ω typ

VS = 0 V to VDD, IS = 100 mA

0.23

0.26

0.3

Ω max

LEAKAGE CURRENTS

VDD = 5.5 V

Source OFF Leakage IS (OFF)

±0.01

nA typ

VS = 4.5 V/1 V, VD = 1 V/4.5 V;

±0.25

±3

±25

nA max

Test Circuit 2

Drain OFF Leakage ID (OFF)

±0.01

nA typ

VS = 4.5 V/1 V, VD = 1 V/4.5 V;

±0.25

±3

±25

nA max

Test Circuit 2

Channel ON Leakage ID, IS (ON)

±0.01

nA typ

VS = VD = 1 V, or VS = VD = 4.5 V;

±0.25

±3

±25

nA max

Test Circuit 3

DIGITAL INPUTS

Input High Voltage, VINH

2.0

V min

Input Low Voltage, VINL

0.8

V max

Input Current

IINL or IINH

0.005

µA typ

VIN = VINL or VINH

±0.1

µA max

CIN, Digital Input Capacitance

4

pF typ

DYNAMIC CHARACTERISTICS

3

tON

33

ns typ

RL = 50

Ω, CL = 35 pF,

45

48

52

ns max

VS = 3 V; Test Circuit 4

tOFF

11

ns typ

RL = 50

Ω, C

L = 35 pF,

16

19

21

ns max

VS = 3 V; Test Circuit 4

Break-Before-Make Time Delay, tBBM 32

ns typ

RL = 50

Ω, C

L = 35 pF,

(ADG823 Only)

1

ns min

VS1 = VS2 = 3 V; Test Circuit 5

Charge Injection

15

pC typ

VS = 2.5 V; RS = 0

Ω, CL = 1 nF;

Test Circuit 6

Off Isolation

–52

dB typ

RL = 50

Ω, C

L = 5 pF,

f =1 MHz; Test Circuit 7

Channel-to-Channel Crosstalk

–82

dB typ

RL = 50

Ω, C

L = 5 pF

f = 1 MHz; Test Circuit 9

Bandwidth –3 dB

24

MHz typ

RL = 50

Ω, CL = 5 pF;

Test Circuit 8

CS (OFF)

85

pF typ

f =1 MHz

CD (OFF)

98

pF typ

f =1 MHz

CD, CS (ON)

230

pF typ

f =1 MHz

POWER REQUIREMENTS

VDD = 5.5 V

Digital Inputs = 0 V or 5.5 V

IDD

0.001

µA typ

1.0

2.0

µA max

NOTES

1Temperature range: Automotive range: –40

°C to +125°C.

2On resistance parameters tested with I

S = 10 mA.

3Guaranteed by design, not subject to production test.

Specifications subject to change without notice.

(VDD = 5 V

± 10%, GND = 0 V. All specifications

–40 C to +125 C, unless otherwise noted.)

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