FUJITSU SEMICONDUCTOR

DATA SHEET

Copyright©2012-2013 FUJITSU SEMICONDUCTOR LIMITED All rights reserved

2013.2

Memory FRAM

256 K (32 K

MB85RC256V

■ DESCRIPTION

The MB85RC256V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768

words

× 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

nonvolatile memory cells.

Unlike SRAM, the MB85RC256V is able to retain data without using a data backup battery.

The read/write endurance of the nonvolatile memory cells used for the MB85RC256V has improved to be

The MB85RC256V does not need a polling sequence after writing to the memory such as the case of Flash

■ FEATURES

• Bit configuration

: 32,768 words

× 8 bits

• Two-wire serial interface

: Fully controllable by two ports: serial clock (SCL) and serial data (SDA).

• Operating frequency

: 1 MHz (Max)

• Read/write endurance

• Data retention

: 10 years (

+ 85 °C), 95 years ( + 55 °C), over 200 years ( + 35 °C)

• Operating power supply voltage : 2.7 V to 5.5 V

• Low-power consumption

: Operating power supply current 200

μA (Max @1 MHz)

Standby current 27

μA (Typ)

• Operation ambient temperature range

:

− 40 °C to + 85 °C

• Package

: 8-pin plastic SOP (FPT-8P-M02)

8-pin plastic SOP (FPT-8P-M08)

Both are RoHS compliant

DS501-00017-3v0-E