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MB85RS2MTPF-G Datasheet(PDF) 1 Page - Fujitsu Component Limited.

Part # MB85RS2MTPF-G
Description  2 M (256 K 횞 8) Bit SPI
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Manufacturer  FUJITSU [Fujitsu Component Limited.]
Direct Link  http://edevice.fujitsu.com/fmd/en/index.html
Logo FUJITSU - Fujitsu Component Limited.

MB85RS2MTPF-G Datasheet(HTML) 1 Page - Fujitsu Component Limited.

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FUJITSU SEMICONDUCTOR
DATA SHEET
Copyright©2013 FUJITSU SEMICONDUCTOR LIMITED All rights reserved
2013.3
Memory FRAM
2 M (256 K
× 8) Bit SPI
MB85RS2MT
■ DESCRIPTION
MB85RS2MT is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 262,144
words
× 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the
nonvolatile memory cells.
MB85RS2MT adopts the Serial Peripheral Interface (SPI).
The MB85RS2MT is able to retain data without using a back-up battery, as is needed for SRAM.
The memory cells used in the MB85RS2MT can be used for 1013 read/write operations, which is a significant
improvement over the number of read and write operations supported by Flash memory and E2PROM.
MB85RS2MT does not take long time to write data like Flash memories or E2PROM, and MB85RS2MT takes
no wait time.
■ FEATURES
• Bit configuration
: 262,144 words
× 8 bits
• Serial Peripheral Interface
: SPI (Serial Peripheral Interface)
Correspondent to SPI mode 0 (0, 0) and mode 3 (1, 1)
• Operating frequency
: 25 MHz (Max)
For FSTRD command 2.7 V to 3.6 V, 40 MHz (Max)
• High endurance
: 1013 times / byte
• Data retention
: 10 years (+85
°C)
• Operating power supply voltage
: 1.8 V to 3.6 V
• Low power consumption
: Operating power supply current 10.6 mA (Max@25 MHz) (TBD)
Standby current 150
μA (Max) (TBD)
Sleep current 10
μA (Max) (TBD)
• Operation ambient temperature range : -40
°C to +85 °C
• Package
: 8-pin plastic SOP (FPT-8P-M08)
8-pin plastic DIP (DIP-8P-M03)
RoHS compliant
DS501-00023-0v01-E


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