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WBP3306 Datasheet(PDF) 1 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
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WBP3306 Datasheet(HTML) 1 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
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1 / 6 page  Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. W W W WB B B BP3306 P3306 P3306 P3306 Rev.A03 Jun.2011 High Voltage Fast-Switching NPN Power Transistor Features ■ Very high switching speed ■ High Voltage Capability ■ Wide Reverse Bias SOA General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply. Absolute Maximum Ratings Symbol Parameter Test Conditions Value Units VCBO Collect-Emitter Voltage VBE=0 950 V VCEO Collector-Emitter Voltage IB=0 400 V VEBO Emitter-Base Voltage IC=0 12 V IC Collector Current 4 A ICP Collector pulse Current (Note) 8 A PC Total Dissipation at Tc=25℃ 70 W TJ Operation Junction Temperature 150 ℃ TSTG Storage Temperature -65~150 ℃ Thermal Characteristics Symbol Parameter Value Units RӨJC Thermal Resistance Junction to Case 1.8 ℃/W RӨJA Thermal Resistance Junction to Ambient 62.5 ℃/W |
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