SiHB21N60EF

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Vishay Siliconix

S17-0299-Rev. B, 27-Feb-17

4

Document Number: 91596

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 8 - Typical Source-Drain Diode Forward Voltage

Fig. 9 - Maximum Safe Operating Area

Fig. 10 - Maximum Drain Current vs. Case Temperature

Fig. 11 - Typical Drain-to-Source Voltage vs. Temperature

0

4

8

12

16

20

24

030

60

90

120

Q

V

V

V

0.1

1

10

100

0.2

0.4

0.6

0.8

1.0

1.2

1.4

V

T

T

V

0.01

0.1

1

10

100

110

100

1000

V

* V

Limited by R

1 ms

I

T

T

Single Pulse

BVDSS Limited

10 ms

100 μs

Operation in this Area

Limited by R

DS(on)

0

5

10

15

20

25

25

50

75

100

125

150

T

550

575

600

625

650

675

700

725

750

-60 -40 -20

0

20

40

60

80 100 120 140 160

T

I