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LMC660EN Datasheet(PDF) 1 Page - National Semiconductor (TI) |
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LMC660EN Datasheet(HTML) 1 Page - National Semiconductor (TI) |
1 / 14 page LMC660 CMOS Quad Operational Amplifier General Description The LMC660 CMOS Quad operational amplifier is ideal for operation from a single supply. It operates from +5V to +15V and features rail-to-rail output swing in addition to an input common-mode range that includes ground. Performance limitations that have plagued CMOS amplifiers in the past are not a problem with this design. Input V OS, drift, and broadband noise as well as voltage gain into realistic loads (2 k Ω and 600Ω) are all equal to or better than widely ac- cepted bipolar equivalents. This chip is built with National’s advanced Double-Poly Silicon-Gate CMOS process. See the LMC662 datasheet for a dual CMOS operational amplifier with these same features. Features n Rail-to-rail output swing n Specified for 2 k Ω and 600Ω loads n High voltage gain: 126 dB n Low input offset voltage: 3 mV n Low offset voltage drift: 1.3 µV/˚C n Ultra low input bias current: 2 fA n Input common-mode range includes V − n Operating range from +5V to +15V supply n ISS = 375 µA/amplifier; independent of V + n Low distortion: 0.01% at 10 kHz n Slew rate: 1.1 V/µs n Available in extended temperature range (−40˚C to +125˚C); ideal for automotive applications n Available to Standard Military Drawing specification Applications n High-impedance buffer or preamplifier n Precision current-to-voltage converter n Long-term integrator n Sample-and-Hold circuit n Peak detector n Medical instrumentation n Industrial controls n Automotive sensors Connection Diagram 14-Pin DIP/SO DS008767-1 April 1998 © 1999 National Semiconductor Corporation DS008767 www.national.com |
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