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1N4002S Datasheet(PDF) 1 Page - Galaxy Semi-Conductor Holdings Limited |
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1N4002S Datasheet(HTML) 1 Page - Galaxy Semi-Conductor Holdings Limited |
1 / 2 page GALAXY ELECTRICAL FEATURES Low cos t D iffus ed junction Low leakage Low forward voltage drop H igh current capability and s im ilar s olvents MECHANICAL DATA C as e:JEDEC A -405,m olded plas tic Term inals : Axial lead ,s olderable per MIL- STD -202,Method 208 Polarity: C olor band denotes cathode Weight: 0.008 ounces,0.23 grams Mounting pos ition: Any M AXIM UM RAT INGS AND ELECT RICAL CHARACT ERIST ICS R atings at 25 am bient tem perature unles s otherw is e s pecified. Single phas e,half w ave,60 H z,res is tive or inductive load. For capacitive load,derate by 20% . 1N 1N 1N 1N 1N 1N 1N UNITS Max imum recurrent peak rev ers e voltage VRRM 200 400 600 800 1000 V Max imum RMS v oltage VRMS 140 280 420 560 700 V Max imum DC blocking voltage VDC 200 400 600 800 1000 V Max imum average f orw ard rectif ied c urrent 9.5mm lead lengths , @T A =75 Peak f orw ard surge c urrent 8.3ms s ingle half -s ine-w av e s uperimposed on rated load @T J =125 Max imum instantaneous f orw ard v oltage @ 1.0 A VF V Max imum revers e current @T A =25 at rated DC blocking v oltage @T A =100 Typical junc tion capac itanc e (Note1) CJ pF Typical thermal res istance (Note2) RθJA /W Operating junction temperature range TJ Storage temperature range TSTG 50 35 50 15 1.0 50 2. Thermal resistance from junction to ambient. A 50.0 1N4001S---1N4007S A 5.0 Eas ily cleaned w ith Freon,Alcohol,Is opropanol IF(AV) 1.0 PLAST IC SILICON RECT IFIERS The plas tic m aterial carries U /L recognition 94V-0 A 30 IFSM NOTE: 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. - 55 ---- + 150 - 55 ---- + 125 IR 100 70 VOLT AGE RANG E: 50 --- 1000 V CURRENT : 1.0 A A - 405 100 www.galaxycn.com BL BLGALAXY ELECTRICAL Document Number 1560137A 1. 4001S 4002S 4003S 4004S 4005S 4006S 4007S Dimensions in millimeters |
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