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Document Number: 91382

4

S11-0440-Rev. C, 14-Mar-11

This datasheet is subject to change without notice.

SiHG20N50C

Vishay Siliconix

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 8 - Maximum Safe Operating Area

Fig. 9 - Maximum Drain Current vs. Case Temperature

10

110

100

1000

V

C

C

C

C

iss

C

rss

C

oss

0

4

8

12

16

20

030

60

90

120

0.1

1

10

100

0.2

0.5

0.8

1.1

1.4

Single Pulse

Operation in this area limited

1 ms

10 ms

100 µs

1000

1

10

100

10

100

1000

10 000

0.1

0

5

10

15

20

25

50

75

100

125

150