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SI3493DDV Datasheet(PDF) 2 Page - Vishay Siliconix |
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SI3493DDV Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 7 page Si3493DDV www.vishay.com Vishay Siliconix S16-2645-Rev. A, 26-Dec-16 2 Document Number: 74735 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage VDS VGS = 0 V, ID = -250 μA -20 - - V VDS temperature coefficient V DS/TJ ID = -250 μA --12 - mV/°C VGS(th) temperature coefficient V GS(th)/TJ -2.5 - Gate-source threshold voltage VGS(th) VDS = VGS, ID =-250 μA -0.4 - -1 V Gate-source leakage IGSS VDS = 0 V, VGS = ± 8 V - - ± 100 nA Zero gate voltage drain current IDSS VDS = -20 V, VGS = 0 V - - -1 μA VDS = -20 V, VGS = 0 V, TJ = 70 °C - - -10 On-state drain current a ID(on) VDS -10 V, VGS = -4.5 V -20 - - A Drain-source on-state resistance a RDS(on) VGS = -4.5 V, ID = -7.5 A - 0.0200 0.0240 VGS = -2.5 V, ID = -6.4 A - 0.0257 0.0321 VGS = -1.8 V, ID = -2 A - 0.0378 0.0511 Forward transconductance a gfs VDS = -10 V, ID = -7.5 A - 30 - S Dynamic b Input capacitance Ciss VDS = -10 V, VGS = 0 V, f = 1 MHz - 1825 - pF Output capacitance Coss - 210 - Reverse transfer capacitance Crss - 200 - Total gate charge Qg VDS = -10 V, VGS = -8 V, ID = -7.5 A - 34.8 52.2 nC VDS = -10 V, VGS = -4.5 V, ID = -7.5 A - 19.8 30 Gate-source charge Qgs -2.6 - Gate-drain charge Qgd -3 - Gate resistance Rg f = 1 MHz 2.12 10.6 21.2 Turn-on delay time td(on) VDD = -10 V, RL = 1.67 , ID -6 A, VGEN = -4.5 V, Rg = 1 -25 38 ns Rise time tr -30 45 Turn-off delay time td(off) - 95 145 Fall time tf -40 60 Turn-on delay time td(on) VDD = -10 V, RL = 1.67 , ID -6 A, VGEN = -8 V, Rg = 1 -8 16 Rise time tr -20 30 Turn-off delay time td(off) - 115 173 Fall time tf -40 60 Drain-Source Body Diode Characteristics Continuous source-drain diode current IS TC = 25 °C - - -8 A Pulse diode forward current ISM -- -32 Body diode voltage VSD IS = -6 A, VGS = 0 V - -0.8 -1.2 V Body diode reverse recovery time trr IF = -6 A, dI/dt = 100 A/μs, TJ = 25 °C -21 32 ns Body diode reverse recovery charge Qrr - 9 18 nC Reverse recovery fall time ta -9 - ns Reverse recovery rise time tb -12 - |
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