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SIHH20N50E Datasheet(PDF) 1 Page - Vishay Siliconix |
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SIHH20N50E Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 7 page SiHH20N50E www.vishay.com Vishay Siliconix S16-1262-Rev. A, 27-Jun-16 1 Document Number: 91847 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 E Series Power MOSFET FEATURES • Completely lead (Pb)-free device • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Kelvin connection for reduced gate noise • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Server and telecom power supplies • Switch mode power supplies (SMPS) • Power factor correction power supplies (PFC) • Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting • Industrial - Welding - Induction heating - Motor drives - Battery chargers - Renewable energy - Solar (PV inverters) Notes a. Repetitive rating; pulse width limited by maximum junction temperature. b. VDD = 140 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 , IAS = 4.5 A. c. ISD ID, dI/dt = 100 A/μs, starting TJ = 25 °C. PRODUCT SUMMARY VDS (V) at TJ max. 550 RDS(on) max. () at 25 °C VGS = 10 V 0.147 Qg max. (nC) 70 Qgs (nC) 9 Qgd (nC) 15 Configuration Single Pin 3 Pin 4 Pin 1 Pin 2 N-Channel MOSFET PowerPAK® 8 x 8 1 2 3 3 4 ORDERING INFORMATION Package PowerPAK 8 x 8 Lead (Pb)-free and Halogen-free SiHH20N50E-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS ± 30 Continuous Drain Current (TJ = 150 °C) VGS at 10 V TC = 25 °C ID 22 A TC = 100 °C 14 Pulsed Drain Current a IDM 53 Linear Derating Factor 1.4 W/°C Single Pulse Avalanche Energy b EAS 286 mJ Maximum Power Dissipation PD 174 W Operating Junction and Storage Temperature Range TJ, Tstg -55 to +150 °C Drain-Source Voltage Slope TJ = 125 °C dV/dt 70 V/ns Reverse Diode dV/dt c 19 |
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