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SIHP25N60EFL Datasheet(PDF) 2 Page - Vishay Siliconix |
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SIHP25N60EFL Datasheet(HTML) 2 Page - Vishay Siliconix |
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2 / 7 page  SiHP25N60EFL www.vishay.com Vishay Siliconix S16-1230-Rev. A, 20-Jun-16 2 Document Number: 91811 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS. b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDSS. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient RthJA -62 °C/W Maximum Junction-to-Case (Drain) RthJC -0.5 SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 600 - - V VDS Temperature Coefficient V DS/TJ Reference to 25 °C, ID = 10 mA - 0.69 - V/°C Gate-Source Threshold Voltage (N) VGS(th) VDS = VGS, ID = 250 μA 3.0 - 5.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA VGS = ± 30 V - - ± 1 μA Zero Gate Voltage Drain Current IDSS VDS = 480 V, VGS = 0 V - - 1 μA VDS = 480 V, VGS = 0 V, TJ = 125 °C - - 500 Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 12.5 A - 0.127 0.146 Forward Transconductance gfs VDS = 30 V, ID = 12.5 A - 11.3 - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = 100 V, f = 1 MHz - 2274 - pF Output Capacitance Coss - 137 - Reverse Transfer Capacitance Crss -4 - Effective Output Capacitance, Energy Related a Co(er) VDS = 0 V to 480 V, VGS = 0 V -79 - Effective Output Capacitance, Time Related b Co(tr) - 330 - Total Gate Charge Qg VGS = 10 V ID = 12.5 A, VDS = 480 V -50 75 nC Gate-Source Charge Qgs -17 - Gate-Drain Charge Qgd -19 - Turn-On Delay Time td(on) VDD = 480 V, ID = 12.5 A, Rg = 9.1 , VGS = 10 V -25 50 ns Rise Time tr -39 68 Turn-Off Delay Time td(off) -47 94 Fall Time tf -21 42 Gate Input Resistance Rg f = 1 MHz, open drain 0.4 0.7 1.4 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS MOSFET symbol showing the integral reverse p - n junction diode -- 25 A Pulsed Diode Forward Current ISM -- 61 Diode Forward Voltage VSD TJ = 25 °C, IS = 12.5 A, VGS = 0 V - 0.9 1.2 V Reverse Recovery Time trr TJ = 25 °C, IF = IS =12.5 A, dI/dt = 100 A/μs, VR = 25 V - 138 276 ns Reverse Recovery Charge Qrr -0.8 1.6 μC Reverse Recovery Current IRRM -11 - A S D G |
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