SQ1912AEEH datasheet(3/12 Pages) VISHAY

Part #	SQ1912AEEH

Description	Automotive Dual N-Channel 20 V (D-S) 175 °C MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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SQ1912EH

www.vishay.com

Vishay Siliconix

S15-1918 Rev. A, 17-Aug-15

3

Document Number: 67394

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Output Characteristics

Transconductance

Capacitance

Transfer Characteristics

On-Resistance vs. Drain Current

Gate Charge

0.0

0.4

0.8

1.2

1.6

2.0

0.0

0.2

0.4

0.6

0.8

1.0

V

DS -Drain-to-Source Voltage (V)

V

GS = 5 V thru 1.5 V

V

GS = 1 V

V

GS = 0.5 V

0

1

2

3

4

5

0.0

0.2

0.4

0.6

0.8

1.0

I

D - Drain Current (A)

T

C = 125 °C

T

C = - 55 °C

T

C = 25 °C

0

20

40

60

80

0

5

10

15

20

V

DS -Drain-to-Source Voltage (V)

C

iss

C

oss

C

rss

0.0

0.4

0.8

1.2

1.6

2.0

0.0

0.5

1.0

1.5

2.0

2.5

V

GS - Gate-to-Source Voltage (V)

T

C = - 55 °C

T

C = 125 °C

T

C = 25 °C

0.0

0.1

0.2

0.3

0.4

0.5

0.0

0.4

0.8

1.2

1.6

2.0

I

D - Drain Current (A)

V

GS = 2.5 V

V

GS = 4.5 V

V

GS = 1.8 V

0

1

2

3

4

5

0.0

0.2

0.4

0.6

0.8

Q

g - Total Gate Charge (nC)

I

D = 1.2 A

V

DS = 10 V

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