SQ2351ES

www.vishay.com

Vishay Siliconix

S12-2312-Rev. B, 01-Oct-12

1

Document Number: 66716

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Automotive P-Channel 20 V (D-S) 175 °C MOSFET

FEATURES

• Material categorization:



For definitions of compliance please see

www.vishay.com/doc?99912

Notes

a. Package limited.

b. Pulse test; pulse width

 300 μs, duty cycle  2 %.

c. When mounted on 1" square PCB (FR-4 material).

d. Parametric verification ongoing.

PRODUCT SUMMARY

- 20

0.115

0.205

- 3.2

Configuration

Single

S

G

D

P-Channel MOSFET

G

TO-236

(SOT-23)

S

D

Top View

2

3

1

SQ2351ES

Marking Code: 8Sxxx

ORDERING INFORMATION

Package

SOT-23

Lead (Pb)-free and Halogen-free

SQ2351ES-T1-GE3

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

- 20

V

Gate-Source Voltage

± 12

Continuous Drain Current

- 3.2

A

- 1.8

- 2.5

- 12.7

Single Pulse Avalanche Current

L = 0.1 mH

- 6

Single Pulse Avalanche Energy

1.8

mJ

2

W

0.67

Operating Junction and Storage Temperature Range

- 55 to + 175

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

LIMIT

UNIT

Junction-to-Ambient

175

°C/W

Junction-to-Foot (Drain)

75