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SQ2310ES Datasheet(PDF) 1 Page - Vishay Siliconix |
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SQ2310ES Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 11 page SQ2389ES www.vishay.com Vishay Siliconix S15-0166-Rev. A, 02-Feb-15 1 Document Number: 63248 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Automotive P-Channel 40 V (D-S) 175 °C MOSFET Marking Code: 9Axxx FEATURES • TrenchFET® power MOSFET • AEC-Q101 qualified • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. When mounted on 1" square PCB (FR4 material). PRODUCT SUMMARY VDS (V) -40 RDS(on) ( Ω) at VGS = -10 V 0.094 RDS(on) ( Ω) at VGS = -4.5 V 0.188 ID (A) -4.1 Configuration Single P-Channel MOSFET S D G Top View SOT-23 (TO-236) 1 G 2 S D 3 ORDERING INFORMATION Package SOT-23 Lead (Pb)-free and Halogen-free SQ2389ES-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS -40 V Gate-Source Voltage VGS ± 20 Continuous Drain Current TC = 25 °C ID -4.1 A TC = 125 °C -2.4 Continuous Source Current (Diode Conduction) IS -3.6 Pulsed Drain Current a IDM -16 Single Pulse Avalanche Current L = 0.1 mH IAS -12 Single Pulse Avalanche Energy EAS 7.2 mJ Maximum Power Dissipation a TC = 25 °C PD 3 W TC = 125 °C 1 Operating Junction and Storage Temperature Range TJ, Tstg -55 to +175 °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT Junction-to-Ambient PCB Mount b RthJA 166 °C/W Junction-to-Foot (Drain) RthJF 50 |
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