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SQM120N03-1m5L Datasheet(PDF) 2 Page - Vishay Siliconix |
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SQM120N03-1m5L Datasheet(HTML) 2 Page - Vishay Siliconix |
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2 / 10 page  SQM70060EL www.vishay.com Vishay Siliconix S16-0653-Rev. A, 18-Apr-16 2 Document Number: 67764 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0, ID = 250 μA 100 - - V Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 1.5 2.0 2.5 Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VGS = 0 V VDS = 100 V - - 1 μA VGS = 0 V VDS = 100 V, TJ = 125 °C - - 50 VGS = 0 V VDS = 100 V, TJ = 175 °C - - 500 On-State Drain Current a ID(on) VGS = 10 V VDS 5 V 50 - - A Drain-Source On-State Resistance a RDS(on) VGS = 10 V ID = 30 A - 0.0046 0.0059 VGS = 10 V ID = 30 A, TJ = 125 °C - - 0.0099 VGS = 10 V ID = 30 A, TJ = 175 °C - - 0.0123 VGS = 4.5 V ID = 20 A - 0.0056 0.0080 Forward Transconductance b gfs VDS = 15 V, ID = 25 A - 95 - S Dynamic b Input Capacitance Ciss VGS = 0 V VDS = 25 V, f = 1 MHz - 4170 5500 pF Output Capacitance Coss - 1935 2600 Reverse Transfer Capacitance Crss - 160 220 Total Gate Charge c Qg VGS = 10 V VDS = 50 V, ID = 50 A -66 100 nC Gate-Source Charge c Qgs -14 - Gate-Drain Charge c Qgd -12 - Gate Resistance Rg f = 1 MHz 0.90 1.92 3 Turn-On Delay Time c td(on) VDD = 50 V, RL = 1.08 ID 50 A, VGEN = 10 V, Rg = 1 -13 25 ns Rise Time c tr -21 35 Turn-Off Delay Time c td(off) -34 60 Fall Time c tf -13 25 Source-Drain Diode Ratings and Characteristics b Pulsed Current a ISM -- 180 A Forward Voltage VSD IF = 50 A, VGS = 0 - 0.90 1.5 V |
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