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SQM120N03-1m5L Datasheet(PDF) 2 Page - Vishay Siliconix

Part # SQM120N03-1m5L
Description  Automotive N-Channel 100 V (D-S) 175 °C MOSFET
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

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SQM70060EL
www.vishay.com
Vishay Siliconix
S16-0653-Rev. A, 18-Apr-16
2
Document Number: 67764
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width
 300 μs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0, ID = 250 μA
100
-
-
V
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 μA
1.5
2.0
2.5
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
-
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V
VDS = 100 V
-
-
1
μA
VGS = 0 V
VDS = 100 V, TJ = 125 °C
-
-
50
VGS = 0 V
VDS = 100 V, TJ = 175 °C
-
-
500
On-State Drain Current a
ID(on)
VGS = 10 V
VDS  5 V
50
-
-
A
Drain-Source On-State Resistance a
RDS(on)
VGS = 10 V
ID = 30 A
-
0.0046
0.0059
VGS = 10 V
ID = 30 A, TJ = 125 °C
-
-
0.0099
VGS = 10 V
ID = 30 A, TJ = 175 °C
-
-
0.0123
VGS = 4.5 V
ID = 20 A
-
0.0056
0.0080
Forward Transconductance b
gfs
VDS = 15 V, ID = 25 A
-
95
-
S
Dynamic b
Input Capacitance
Ciss
VGS = 0 V
VDS = 25 V, f = 1 MHz
-
4170
5500
pF
Output Capacitance
Coss
-
1935
2600
Reverse Transfer Capacitance
Crss
-
160
220
Total Gate Charge c
Qg
VGS = 10 V
VDS = 50 V, ID = 50 A
-66
100
nC
Gate-Source Charge c
Qgs
-14
-
Gate-Drain Charge c
Qgd
-12
-
Gate Resistance
Rg
f = 1 MHz
0.90
1.92
3
Turn-On Delay Time c
td(on)
VDD = 50 V, RL = 1.08 
ID  50 A, VGEN = 10 V, Rg = 1 
-13
25
ns
Rise Time c
tr
-21
35
Turn-Off Delay Time c
td(off)
-34
60
Fall Time c
tf
-13
25
Source-Drain Diode Ratings and Characteristics b
Pulsed Current a
ISM
--
180
A
Forward Voltage
VSD
IF = 50 A, VGS = 0
-
0.90
1.5
V


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