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BAS16XV2 Datasheet(PDF) 2 Page - ON Semiconductor |
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BAS16XV2 Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 4 page BAS16XV2 www.onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Voltage Leakage Current (VR = 100 V) (VR = 75 V, TJ = 150°C) (VR = 25 V, TJ = 150°C) IR − − − 1.0 50 30 mA Reverse Breakdown Voltage (IBR = 100 mA) V(BR) 100 − V Forward Voltage (IF = 1.0 mA) (IF = 10 mA) (IF = 50 mA) (IF = 150 mA) VF − − − − 715 855 1000 1250 mV Diode Capacitance (VR = 0, f = 1.0 MHz) CD − 2.0 pF Forward Recovery Voltage (IF = 10 mA, tr = 20 ns) VFR − 1.75 V Reverse Recovery Time (IF = IR = 10 mA, RL = 50 Ω) trr − 6.0 ns Stored Charge (IF = 10mA to VR = 5.0V, RL = 500 Ω) QS − 45 pC Notes: 1. A 2.0 k Ω variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr +10 V 2.0 k 820 Ω 0.1 μF D.U.T. VR 100 μH 0.1 μF 50 Ω OUTPUT PULSE GENERATOR 50 Ω INPUT SAMPLING OSCILLOSCOPE tr tp t 10% 90% IF IR trr t iR(REC) = 1.0 mA OUTPUT PULSE (IF = IR = 10 mA; MEASURED at iR(REC) = 1.0 mA) IF INPUT SIGNAL Figure 1. Recovery Time Equivalent Test Circuit |
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