VS-GA100NA60UP datasheet(2/9 Pages) VISHAY

Part #	VS-GA100NA60UP

Description	Insulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 100 A

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Manufacturer	VISHAY [Vishay Siliconix]

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VS-GA100NA60UP

www.vishay.com

Vishay Semiconductors

Revision: 01-Feb-12

2

Document Number: 94543

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNITS

Collector to emitter breakdown voltage

V(BR)CES

VGE = 0 V, IC = 250 μA

VGE = 0 V, IC = 1.0 mA

600

-

V

Temperature coeffecient of

breakdown voltage

V

(BR)CESTJ

-0.36

-

V/°C

Collector to emitter saturation voltage

VCE(on)

VGE = 15 V, IC = 50 A

See fig. 1, 4

-

1.49

2.1

V

VGE = 15 V, IC = 100 A

-

1.80

-

VGE = 15 V, IC = 50 A, TJ = 150 °C

-

1.47

-

Gate threshold voltage

VGE(th)

VCE = VGE, IC = 250 μA

3.0

-

6.0

Temperature coefficient of

threshold voltage

V

GE(th)/ TJ

VCE = VGE, IC = 250 μA

-

- 7.6

-

mV/°C

Forward transconductance

gfe

VCE = 100 V, IC = 50 A

34

52

-

S

Zero gate voltage collector current

ICES

VGE = 0 V, VCE = 600 V

-

250

μA

VGE = 0 V, VCE = 600 V, TJ = 150 °C

-

1.3

mA

Diode forward voltage drop

VFM

IC = 50 A

See fig. 12

-1.3

1.6

V

IC = 50 A, TJ = 150 °C

-

1.16

1.3

Gate to emitter leakage current

IGES

VGE = ± 20 V

-

± 100

nA

SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNITS

Total gate charge (turn-on)

Qg

IC = 50 A

VCC = 400 V

VGE = 15 V

See fig. 7

-

430

640

nC

Gate emitter charge (turn-on)

Qge

-48

72

Gate collector charge (turn-on)

Qgc

-

130

190

Turn-on delay time

td(on)

TJ = 25 °C

IC = 60 A, VCC = 480 V

VGE = 15 V, Rg = 5.0

energy losses include “tail” and

diode reverse recovery

-57

-

ns

Rise time

tr

-80

-

Turn-off delay time

td(off)

-

240

-

Fall time

tf

-

120

-

Turn-on switching loss

Eon

-0.41

-

mJ

Turn-off switching loss

Eoff

-2.51

-

Total switching loss

Ets

-

2.92

4.4

Turn-on delay time

td(on)

TJ = 150 °C

IC = 60 A, VCC = 480 V

VGE = 15 V, Rg = 5.0

energy losses include “tail” and

diode reverse recovery

-57

-

ns

Rise time

tr

-80

-

Turn-off delay time

td(off)

-

380

-

Fall time

tf

-

170

-

Total switching loss

Ets

-4.78

-

mJ

Internal emitter inductance

LE

-2.0

-

nH

Input capacitance

Cies

VGE = 0 V

VCC = 30 V

f = 1.0 MHz

See fig. 6

-

7400

-

pF

Output capacitance

Coes

-

730

-

Reverse transfer capacitance

Cres

-90

-

Diode reverse recovery time

trr

TJ = 25 °C

See fig. 13

IF = 50 A

VR = 200 V

dI/dt = 200 A/μs

-

90

140

ns

TJ = 125 °C

-

120

180

Diode peak reverse recovery current

Irr

TJ = 25 °C

See fig. 14

-7.3

11

A

TJ = 125 °C

-

11

16

Diode reverse recovery charge

Qrr

TJ = 25 °C

See fig. 15

-

360

550

nC

TJ = 125 °C

-

780

1200

Diode peak rate of fall recovery

during tb

dI(rec)M/dt

TJ = 25 °C

See fig. 16

-

370

-

A/μs

TJ = 125 °C

-

220

-

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