VS-8EWS08S-M3, VS-8EWS12S-M3

www.vishay.com

Vishay Semiconductors

Revision: 19-Jan-17

1

Document Number: 93383

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

High Voltage Surface Mountable Input Rectifier Diode, 8 A

FEATURES

• Glass passivated pellet chip junction

• Meets MSL level 1, per J-STD-020,

LF maximum peak of 260 °C

• Material categorization:



for definitions of compliance please see

www.vishay.com/doc?99912

APPLICATIONS

• Input rectification

• Vishay Semiconductors switches and output rectifiers

which are available in identical package outlines

DESCRIPTION

The VS-8EWS..S-M3 rectifier high voltage series has been

optimized for very low forward voltage drop, with moderate

leakage. The glass passivation technology used has reliable

operation up to 150 °C junction temperature.

The high reverse voltage range available allows design of

input stage primary rectification with outstanding voltage

surge capability.



Note

PRODUCT SUMMARY

Package

TO-252AA (D-PAK)

8 A

800 V, 1200 V

1.1 V

150 A

150 °C

Diode variation

Single die

Base

cathode

+

2

13

Anode -- Anode

1

2

3

TO-252AA (D-PAK)

OUTPUT CURRENT IN TYPICAL APPLICATIONS

APPLICATIONS

SINGLE-PHASE BRIDGE

THREE-PHASE BRIDGE

UNITS

NEMA FR-4 or G10 glass fabric-based epoxy

with 4 oz. (140 μm) copper

1.2

1.6

A

2.5

2.8

5.5

6.5

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

CHARACTERISTICS

VALUES

UNITS

Sinusoidal waveform

8

A

800/1200

V

150

A

1.10

V

-55 to +150

°C

VOLTAGE RATINGS

PART NUMBER

PEAK REVERSE VOLTAGE

V

PEAK REVERSE VOLTAGE

V

AT 150 °C

mA

VS-8EWS08S-M3

800

900

0.5

VS-8EWS12S-M3

1200

1300