MMBD914LT3G datasheet(2/4 Pages) ONSEMI

Part #	MMBD914LT3G

Description	High-Speed Switching Diode

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Manufacturer	ONSEMI [ON Semiconductor]

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MMBD914LT1G, SMMBD914LT1G, MMBD914LT3G, SMMBD914LT3G

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Reverse Breakdown Voltage

(IR = 100 mAdc)

V(BR)

100

−

Vdc

Reverse Voltage Leakage Current

(VR = 20 Vdc)

(VR = 75 Vdc)

IR

−

25

5.0

nAdc

mAdc

Diode Capacitance

(VR = 0, f = 1.0 MHz)

CT

−

4.0

pF

Forward Voltage

(IF = 10 mAdc)

VF

−

1.0

Vdc

Reverse Recovery Time

(IF = IR = 10 mAdc) (Figure 1)

trr

−

4.0

ns

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

1. FR− 5 = 1.0

0.75 0.062 in.

2. Alumina = 0.4

0.3 0.024 in. 99.5% alumina.

Notes: 1. A 2.0 k

W variable resistor adjusted for a Forward Current (IF) of 10 mA.

Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.

Notes: 3. tp » trr

+10 V

2.0 k

820

W

0.1

mF

DUT

VR

100

mH

0.1

mF

50

W OUTPUT

PULSE

GENERATOR

50

W INPUT

SAMPLING

OSCILLOSCOPE

tr

tp

t

10%

90%

IF

IR

trr

t

iR(REC) = 1.0 mA

OUTPUT PULSE

(IF = IR = 10 mA; MEASURED

at iR(REC) = 1.0 mA)

IF

INPUT SIGNAL

Figure 1. Recovery Time Equivalent Test Circuit

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