VS-8ETL06-1PbF datasheet(2/9 Pages) VISHAY

Part #	VS-8ETL06-1PbF

Description	Benchmark ultralow forward voltage drop

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Manufacturer	VISHAY [Vishay Siliconix]

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VS-8ETL06SPbF, VS-8ETL06-1PbF

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Vishay Semiconductors

Revision: 15-Nov-16

2

Document Number: 94029

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNITS

Reverse recovery time

trr

IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V

-

60

100

ns

IF = 8 A, dIF/dt = 100 A/μs, VR = 30 V

-

150

250

TJ = 25 °C

IF = 8 A

dIF/dt = 200 A/μs

VR = 390 V

-

170

-

TJ = 125 °C

-

250

-

Peak recovery current

IRRM

TJ = 25 °C

-

15

-

A

TJ = 125 °C

-

20

-

Reverse recovery charge

Qrr

TJ = 25 °C

-

1.3

-

μC

TJ = 125 °C

-

2.6

-

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNITS

Maximum junction and storage



temperature range

TJ, TStg

-65

-

175

°C

Thermal resistance,



junction to case per leg

RthJC

-1.4

2

°C/W

Thermal resistance,



junction to ambient per leg

RthJA

Typical socket mount

-

70

Thermal resistance,



case to heatsink

RthCS

Mounting surface, flat, smooth and

greased

-0.5

-

Weight

-2.0

-

g

-0.07-

oz.

Mounting torque

6.0

(5.0)

-

12

(10)

kgf · cm

(lbf · in)

Marking device

Case style TO-263AB (D2PAK)

8ETL06S

Case style TO-262

8ETL06-1

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VS-8ETL06-1PbF Datasheet(PDF) 2 Page - Vishay Siliconix

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