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IS31AP2006-DLS2-TR Datasheet(PDF) 6 Page - Integrated Silicon Solution, Inc |
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IS31AP2006-DLS2-TR Datasheet(HTML) 6 Page - Integrated Silicon Solution, Inc |
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6 / 17 page  IS31AP2006 Integrated Silicon Solution, Inc. – www.issi.com 6 Rev. B, 08/17/2015 ELECTRICAL CHARACTERISTICS (NOTE 1) TA = 25°C, Gain= 2V/V. Symbol Parameter Condition Min. Typ. Max. Unit PO Output power THD+N = 10% f = 1kHz, RL = 8Ω VCC = 5.0V 1.70 W VCC = 4.2V 1.20 VCC = 3.6V 0.83 THD+N = 10% f = 1kHz, RL = 4Ω VCC = 5.0V 3 W VCC = 4.2V 2.05 VCC = 3.6V 1.55 THD+N = 1% f = 1kHz, RL = 8Ω VCC = 5.0V 1.45 W VCC = 4.2V 0.95 VCC = 3.6V 0.66 THD+N=1% f = 1kHz, RL = 4Ω VCC = 5.0V 2.50 W VCC = 4.2V 1.70 VCC = 3.6V 1.25 THD+N Total harmonic distortion plus noise VCC = 5.0V, PO =1.0W, RL = 8Ω, f = 1kHz 0.28 % VCC = 5.0V, PO =1.2W, RL = 4Ω, f = 1kHz 0.31 VN Output voltage noise VCC = 3.6V~5V, f =20Hz to 20kHz, inputs ac-grounded with CI = 1μF A-Weighting 68 μVrms tWU Wake-up time from shutdown VCC = 3.6V 36 ms SNR Signal-to-noise ratio PO =1.0W, RL = 8Ω, VCC = 5.0V 92 dB PSRR Power supply rejection ratio VCC = 2.5V ~ 5.5V -55 dB Note 1: Guaranteed by design. |
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