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TPS62136RGXT Datasheet(PDF) 6 Page - Texas Instruments |
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TPS62136RGXT Datasheet(HTML) 6 Page - Texas Instruments |
6 / 45 page 6 TPS62136, TPS621361 SLVSDV2 – MARCH 2017 www.ti.com Product Folder Links: TPS62136 TPS621361 Submit Documentation Feedback Copyright © 2017, Texas Instruments Incorporated Electrical Characteristics (continued) over operating junction temperature (TJ= -40 °C to +125 °C) and VIN= 3 V to 17 V. Typical values at VIN = 12 V and TA= 25 °C. (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT (1) See also HICCUP Current Limit And Short Circuit Protection (TPS62136 only) and Current Limit And Short Circuit Protection (TPS621361 only). (2) The output voltage accuracy in Power Save Mode can be improved by increasing the output capacitor value, reducing the output voltage ripple (see Pulse Width Modulation (PWM) Operation). POWER SWITCH RDS(ON) High-Side MOSFET ON- Resistance VIN ≥ 4 V 100 180 mΩ Low-Side MOSFET ON- Resistance VIN ≥ 4 V 39 67 mΩ ILIMH High-Side MOSFET Current Limit dc value(1) 4.8 5.6 6.5 A ILIML Low-Side MOSFET Current Limit dc value(1) 4.8 5.6 6.5 A ILIMNEG Negative current limit dc value 1.5 A fSW PWM Switching Frequency MODE = high; VIN = 12V, VOUT = 3.3V; IOUT = 1A 1 MHz OUTPUT VFB Feedback Voltage 0.7 V ILKG_FB Input Leakage Current (FB) VFB= 0.7 V 1 70 nA VFB Feedback Voltage Accuracy(2) VIN ≥ VOUT +1 V PWM mode -1% 1% VIN ≥ VOUT +1 V; VOUT ≥ 1.5 V PFM mode; Co,eff ≥ 47 µF, L = 1.5 µH -1% 2% 1 V ≤ VOUT < 1.5 V PFM mode; Co,eff ≥ 60 µF, L = 1.5 µH -1% 2.5% VOUT < 1 V PFM mode; Co,eff ≥ 75 µF, L = 1.5 µH -1% 2.5% VFB Feedback Voltage Accuracy with Voltage Tracking VIN ≥ VOUT +1 V; VSS/TR = 0.35 V PWM mode -2% 7.5% RDS(ON) FB2 resistance to GND when VSEL= high 10 30 Ω ILKG_FB2 Input Leakage Current in FB2 when VSEL = low 1 70 nA Load Regulation PWM mode operation 0.05 %/A Line Regulation PWM mode operation, IOUT= 1 A, VIN ≥ Vout + 1 V or VIN ≥ 3.5 V whichever is larger 0.02 %/V Output Discharge Resistance TPS62136 only 100 Ω tdelay Start-up Delay time IO= 0 mA, Time from EN=high to start switching; VIN applied already 200 300 µs tramp Ramp time; SS/TR pin open IO= 0 mA, Time from first switching pulse until 95% of nominal output voltage; device not in current limit 150 µs |
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