MV104 datasheet(1/4 Pages) ONSEMI

Part #	MV104

Description	Silicon Tuning Diode

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Manufacturer	ONSEMI [ON Semiconductor]

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Silicon Tuning Diode

This device is designed for FM tuning, general frequency control

and tuning, or any top–of–the–line application requiring

back–to–back diode configurations for minimum signal distortion and

detuning.

• High Figure of Merit  Q = 140 (Typ) @ V

R = 3.0 Vdc, f = 100

MHz

• Guaranteed Capacitance Range

37–42 pF @ VR = 3.0 Vdc (MV104)

• Dual Diodes – Save Space and Reduce Cost

• Monolithic Chip Provides Near Perfect Matching – Guaranteed ±

1.0% (Max) Over Specified Tuning Range

MAXIMUM RATINGS (EACH DIODE)

Rating

Symbol

Value

Unit

Reverse Voltage

VR

32

Vdc

Forward Current

IF

200

mAdc

Total Power Dissipation @ TA = 25°C

Derate above 25

°C

PD

280

2.8

mW

mW/

°C

Junction Temperature

TJ

+125

°C

Storage Temperature Range

Tstg

–55 to +150

°C

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)

Characteristic

Symbol

Min

Typ

Max

Unit

Reverse Breakdown Voltage

(IR = 10 µAdc)

V(BR)R

32

—

Vdc

Reverse Voltage Leakage Current TA = 25°C

(VR = 30 Vdc)

TA = 60°C

IR

—

50

500

nAdc

Diode Capacitance Temperature Coefficient

(VR = 4.0 Vdc, f = 1.0 MHz)

TCC

—

280

—

ppm/

°C

CT, Diode Capacitance

VR = 3.0 Vdc, f = 1.0 MHz

pF

Q, Figure of Merit

VR = 3.0 Vdc

f = 100 MHz

CR, Capacitance Ratio

C3/C30

f = 1.0 MHz

Device

Min

Max

Min

Typ

Min

Max

MV104

37

42

100

140

2.5

2.8

ON Semiconductort

March, 2001 – Rev. 2

1

Publication Order Number:

MV104/D

MV104

DUAL

VOLTAGE VARIABLE

CAPACITANCE DIODE

CASE 29–11, STYLE 15

TO–92 (TO–226AA)

1

2

3

Pin 1

A1

Pin 3

A2

Pin 2

C

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