VFT3080S-M3 datasheet(2/4 Pages) VISHAY

Part #	VFT3080S-M3

Description	Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A

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Manufacturer	VISHAY [Vishay Siliconix]

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VFT3080S-M3

www.vishay.com

Vishay General Semiconductor

Revision: 11-Sep-13

2

Document Number: 89263

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

(1) Pulse test: 300 μs pulse width, 1 % duty cycle

(2) Pulse test: Pulse width

 40 ms

RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)

Fig. 1 - Maximum Forward Current Derating Curve

Fig. 2 - Forward Power Dissipation Characteristics

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL

TYP.

MAX.

UNIT

Instantaneous forward voltage

IF = 5 A

TA = 25 °C

VF (1)

0.47

-

V

IF = 15 A

0.61

-

IF = 30 A

0.82

0.95

IF = 5 A

TA = 125 °C

0.39

-

IF = 15 A

0.57

-

IF = 30 A

0.73

0.72

Reverse current

VR = 80 V

TA = 25 °C

IR (2)

70

1000

μA

TA = 125 °C

23

45

mA

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

VFT3080S

UNIT

Typical thermal resistance

RJC

5.0

°C/W

ORDERING INFORMATION (Example)

PACKAGE

PREFERRED P/N

UNIT WEIGHT (g)

PACKAGE CODE

BASE QUANTITY

DELIVERY MODE

ITO-220AB

VFT3080S-M3/4W

1.75

4W

50/tube

Tube

Case Temperature (°C)

35

20

0

75

175

25

100

150

5

50

125

10

30

15

Resistive or Inductive Load

V(B,I)T3080S

VFT3080S

25

Mounted on Specific Heatsink

D = 0.1

D = 0.2

D = 0.3

D = 0.5

D = 1.0

Average Forward Current (A)

30

25

0

015

35

520

10

30

5

15

D = t

p/T

t

p

T

20

D = 0.8

10

25

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