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VS-HFA90NH40PBF Datasheet(PDF) 1 Page - Vishay Siliconix |
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VS-HFA90NH40PBF Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 7 page VS-HFA90NH40PbF www.vishay.com Vishay Semiconductors Revision: 19-Mar-15 1 Document Number: 94044 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 HEXFRED® Ultrafast Soft Recovery Diode, 210 A FEATURES • Very low Qrr and trr • Designed and qualified for industrial level • UL approved file E222165 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 BENEFITS • Reduced RFI and EMI • Reduced snubbing DESCRIPTION HEXFRED® diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current, temperature and dIF/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses. PRODUCT SUMMARY IF (maximum) 210 A VR 400 V IF(DC) at TC 106 A at 100 °C Package HALF-PAK (D-67) Circuit Single diode Lug terminal anode Base cathode HALF-PAK (D-67) ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Cathode to anode voltage VR 400 V Continuous forward current IF TC = 25 °C 210 A TC = 100 °C 106 Single pulse forward current IFSM Limited by junction temperature 600 Non-repetitive avalanche energy EAS L = 100 μH, duty cycle limited by maximum TJ 1.4 mJ Maximum power dissipation PD TC = 25 °C 329 W TC = 100 °C 132 Operating junction and storage temperature range TJ, TStg -55 to +150 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Cathode to anode breakdown voltage VBR IR = 100 μA 400 - - V Maximum forward voltage VFM IF = 90 A See fig. 1 - 1.06 1.45 IF = 180 A - 1.2 1.67 IF = 90 A, TJ = 125 °C - 0.96 1.23 Maximum reverse leakage current IRM TJ = 125 °C, VR = 400 V See fig. 2 - 0.6 2 mA Junction capacitance CT VR = 200 V See fig. 3 - 180 260 pF Series inductance LS From top of terminal hole to mounting plane - 7.0 - nH |
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