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VS-HFA90NH40PBF Datasheet(PDF) 1 Page - Vishay Siliconix

Part # VS-HFA90NH40PBF
Description  UL approved file E222165
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

VS-HFA90NH40PBF Datasheet(HTML) 1 Page - Vishay Siliconix

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VS-HFA90NH40PbF
www.vishay.com
Vishay Semiconductors
Revision: 19-Mar-15
1
Document Number: 94044
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
HEXFRED®
Ultrafast Soft Recovery Diode, 210 A
FEATURES
• Very low Qrr and trr
• Designed and qualified for industrial level
• UL approved file E222165
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
BENEFITS
• Reduced RFI and EMI
• Reduced snubbing
DESCRIPTION
HEXFRED® diodes are optimized to reduce losses and
EMI/RFI in high frequency power conditioning systems. An
extensive characterization of the recovery behavior for
different values of current, temperature and dIF/dt simplifies
the calculations of losses in the operating conditions. The
softness of the recovery eliminates the need for a snubber in
most applications. These devices are ideally suited for
power converters, motors drives and other applications
where switching losses are significant portion of the total
losses.
PRODUCT SUMMARY
IF (maximum)
210 A
VR
400 V
IF(DC) at TC
106 A at 100 °C
Package
HALF-PAK (D-67)
Circuit
Single diode
Lug terminal
anode
Base
cathode
HALF-PAK (D-67)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Cathode to anode voltage
VR
400
V
Continuous forward current
IF
TC = 25 °C
210
A
TC = 100 °C
106
Single pulse forward current
IFSM
Limited by junction temperature
600
Non-repetitive avalanche energy
EAS
L = 100 μH, duty cycle limited by maximum TJ
1.4
mJ
Maximum power dissipation
PD
TC = 25 °C
329
W
TC = 100 °C
132
Operating junction and storage
temperature range
TJ, TStg
-55 to +150
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Cathode to anode breakdown
voltage
VBR
IR = 100 μA
400
-
-
V
Maximum forward voltage
VFM
IF = 90 A
See fig. 1
-
1.06
1.45
IF = 180 A
-
1.2
1.67
IF = 90 A, TJ = 125 °C
-
0.96
1.23
Maximum reverse leakage current
IRM
TJ = 125 °C, VR = 400 V
See fig. 2
-
0.6
2
mA
Junction capacitance
CT
VR = 200 V
See fig. 3
-
180
260
pF
Series inductance
LS
From top of terminal hole to mounting plane
-
7.0
-
nH


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